Fairchild Semiconductor KSC5042 Datasheet
KSC5042
High Voltage Switchihg Dynamic Focus
Application
• High Collector-Emitter Breakdown Voltage : BV
•Small C
• Wide S.O.A
• High reliability
=2.8pF(Typ.)
ob
NPN Triple Diffused Planar Silicon Transistor
CEO
=900V
1
1.Base 2.Collector 3.Emitter
TO-220
KSC5042
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 900 V
Emitter-Base Voltage 5 V
Collector Current (DC) 100 mA
Collector Current (Pulse) 300 mA
Collector Dissipation (TC=25°C) 10 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) *Collector-Emitter Saturation Voltage IC=20mA, IB = 4mA 5 V
V
CE
(sat) *B ase-E mit ter Saturat ion Voltage IC=20mA, IB = 4mA 2 V
V
BE
C
ob
* Pulse test: PW = 300µs, Duty Cycle = 2% pulsed
Collector-Base Breakdown Voltage IC=1mA, IE = 0 1500 V
Collector-Emitter Breakdown Voltage IC=5mA, IB = 0 900 V
Emitter-Base Breakdown Voltage IE=1mA, IC = 0 5 V
Collector Cut-off Current VCB=900V, IE = 0 10 µA
Emitter Cut-off Current VEB=4V, IC = 0 10 µA
*DC Current Gain VCE=5V, IC = 10mA 30
Output Capacitance VCB=100V, f = 1MHz 2.8 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
KSC5042
100
IB = 10mA
90
80
70
60
50
40
30
[A], COLLECTOR CURRENT
20
C
I
10
0
012345678910
IB = 9mA
IB = 8mA
IB = 7mA
IB = 6mA
IB = 5mA
IB = 4mA
IB = 3mA
IB = 2mA
IB = 1mA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 5 I
VCE = 5V
100
10
, DC CURRENT GAIN
FE
h
1
110100
IC[mA], COLLECTOR CURRENT
B
10
[A], COLLECTOR CURRENT
C
1
I
0.1 1 10 100
f = 1MHz
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Collector-Emitter Saturation Voltage
IC(Pulse)
ICMAX
100
10
[mA], COLLECTOR CURRENT
C
I
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
µ
200
s
µ
s
500
1ms
µ
s
10ms
D.C
12
10
8
6
4
[W], POWER DISSIPATION
C
2
P
0
0 25 50 75 1 00 125 1 50 175
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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