Fairchild Semiconductor KSC5039F Datasheet
KSC5039F
High Voltage Power Switch Switching
Application
KSC5039F
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage 800 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current (DC) 5 A
Collector Current (Pulse) 10 A
Base Current 3 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature -65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Uni ts
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) *Collector-Emitter Saturation Voltage IC = 2.5A, IB = 0.5A 1.5 V
V
CE
(sat) *Base-Emitter Saturat ion Voltage IC = 2.5A, IB = 0.5A 2.0 V
V
BE
fT
C
ob
t
ON
t
STG
t
F
* Plus test: PW=300µs, Duty Cycle=2% Pulsed
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
Emitter-Base Breakdown Voltage IC = 1mA, IC = 0 7
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time VCC=150V , IC = 2.5A,
Storage Time 3 µs
Fall Time 0.8 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 500V, IE = 0 10 µA
CB
= 7V, IC = 0 10 µA
EB
= 5V, IC = 0.3A 10
CE
= 5V, IC = 0.1A 10 MHz
CE
= 10V , f = 1MHz 40 pF
CB
I
= -IB2 = 0.5A
B1
= 60Ω
R
L
1 µs
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSC5039F
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
[A], COLLECTOR CURRENT
0.4
C
I
0.2
0.0
IB = 200mA
IB = 180mA
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IB = 160mA
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 60mA
IB = 40mA
IB = 20mA
IC = 5 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
[A], COLLECTOR CURRENT
1.0
C
I
0.5
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
(pF), CAPACITANCE
10
OB
C
1
1 10 100 1000
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Figure 4. Base-Emitte On Voltage
f = 1MHz
= 0
I
E
100
10
1
0.1
(MHz), CURRENT GAIN BANDWIDTH PRODUCT
T
f
0.01
0.01 0.1 1
IC[A], COLLECTOR CURRENT
VCE = 10V
= 10MHz
f
REF
Rev. A, February 2000
Loading...