Fairchild Semiconductor KSC5030F Datasheet
KSC5030F
High Voltage and High Reliability
• High Speed Switching
•Wide SOA
KSC5030F
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage 1100 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current (DC) 6 A
Collector Current (Pulse) 20 A
Base Current 3 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. T yp. Max. Units
BVCBO
BVCEO
BVEBO
(sus) DC Current Gain IC = 3A, IB1 = -IB2 = 0.6A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 2 V
V
CE
(sat) Base-Em itter Satura tion Voltage IC = 3A, IB = 0.6A 1.5 V
V
BE
C
ob
f
T
t
ON
t
STG
t
F
Collector Cut-off Current IC = 1mA, IE = 0, VBE=0 1100 V
Collector Cut-off Current IC = 5mA, R
Emitter Cut-off Current IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain VCE= 5V, IC = 0.4A
Output Capacitance V
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
BE
L = 1mH, Clamped
= 800V, IE = 0 10 µA
CB
= 5V, IC = 0 10 µA
EB
V
= 5V , IC = 2A
CE
= 10V, IE = 0, f = 1MHz 120 pF
CE
= 10V, IC = 0.4A 15 MHz
CE
= 400V
CC
= 5IB1 = -2.5IB2 = 4A
I
C
= 100Ω
R
L
=∞ 800 V
800 V
10
40
8
0.5 µs
hFE Classification
Classification R O Y
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
10 ~ 20 15 ~ 30 20 ~ 40
Typical Characteristics
KSC5030F
10
9
8
7
6
5
4
3
[A], COLLECTOR CURRENT
C
2
I
1
0
012345678910
IB = 800mA
IB = 700mA
IB = 600mA
IB = 500mA
IB = 400mA
IB = 300mA
IB = 200mA
IB = 150mA
IB = 100mA
IB = 50mA
IB = 20mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 0
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 5 I
B
10
9
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
VCE = 5V
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
0.1 1 10
Figure 5. Switching Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
t
STG
IC[A], COLLECTOR CURRENT
Figure 4. Base-Emitter On Voltage
100
IC(max).(Pulse)
10
IC(max)
t
ON
t
F
1
0.1
[A], COLLECTO R CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-E MI T TE R VOLT A GE
100
10ms
DC
µ
1ms
Rev. B1, December 2002
s
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