Fairchild Semiconductor KSC5029 Datasheet
High Voltage and High Reliabilty
• High Speed Switching
• Wide SOA
KSC5029
KSC5029
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
T
J
T
STG
Collector-Base Voltage 1100 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current (DC) 4.5 A
Collector Current (Pulse) 15 A
Base Current 2 A
Collector Dissipation (TC=25°C) 90 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. T yp. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 2A, I
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
(Sat) Collecto r-Em itter Saturation Voltage IC = 2A, IB = 0.4A 2 V
V
CE
(Sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1.5 V
V
BE
C
ob
fT
tON
tSTG
tF
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn ON Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
B
L = 2mH, Clamped
CB
EB
CE
V
CE
CB
CE
CC
I
C
R
L
1
= 800V, IE = 0 10 µA
= 5V, IC = 0 10 µA
= 5V, IC = 0.3A
= 5V, IC = 1.5A
= 10V , IE = 0, f = 1MHz 90 pF
= 10V, IC = 0.3A 15 MHz
= 400V
= 51
= -2.5I
B
1
= 133Ω
= -I
= 0.4A
B
2
B
2
= 3A
800 V
10
40
8
0.5 µs
hFE Classificntion
Classification N R O
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
10 ~ 20 15 ~ 30 20 ~ 40
Typical Characteristics
KSC5029
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
[A], COLLECTOR CURRENT
1.0
C
I
0.5
0.0
012345678910
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 800mA
IB = 600mA
IB = 500mA
IB = 400mA
IB = 300mA
IB = 200mA
IB = 150mA
IB = 100mA
IB = 50mA
IB = 20mA
IB = 0
IC = 5 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
0.00.20.40.60.81.01.2
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
t
STG
t
ON
t
F
100
ICMAX.(Pulse)
10
ICMAX
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
µ
s
10ms
1ms
Rev. A1, June 2001
DC
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