Fairchild Semiconductor KSC5027 Datasheet
High Voltage and High Reliability
• High Speed Switching
•Wide SOA
KSC5027
KSC5027
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
IB
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage 1100 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current (DC) 3 A
Collector Current (Pulse) 10 A
Base Current 1.5 A
Collector Dissipation ( TC=25°C) 50 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 2 V
CE
(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V
V
BE
C
ob
f
T
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V
Collector-Emitter Breakdown Voltage IC = 5mA, R
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn ON Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
L = 2mH, Clamped
= 800V, IE = 0 10 µA
CB
= 5V , IC = 0 10 µA
EB
= 5V, IC = 0.2A
CE
= 5V, IC = 1A
V
CE
= 10V, IE = 0, f = 1MH z 60 pF
CB
= 10V, IC = 0.2A 15 MHz
CE
= 400V
CC
= 5IB1 = -2.5IB2 = 2A
I
C
R
= 200Ω
L
=∞ 800 V
BE
800 V
10
40
8
0.5 µs
hFE Classification
Classification N R O
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
10 ~ 20 15 ~ 30 20 ~ 40
Typical Characteristics
KSC5027
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
[A], COLLECTOR CURRENT
0.8
C
I
0.4
0.0
012345678910
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA
IB = 80mA
IB = 60mA
IB = 50mA
IB = 40mA
IB = 30mA
IB = 20mA
IB = 10mA
IB = 0
IC = 5 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
0.00.20.40.60.81.01.2
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Base-Emitter On Voltage
VCC = 400V
1 = -2.5.IB2 = I
5.I
B
t
STG
C
100
ICMAX.(Pulse)
10
ICMAX(Continuous)
t
ON
t
F
1
0.1
0.01
[A], COLLECTOR CURRENT
C
I
1E-3
1 10 100 1000 10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
10ms
DC
100
1ms
µ
s
Rev. A, February 2000
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