Fairchild Semiconductor KSC5026M Datasheet
KSC5026M
High Voltage and High Reliability
• High Speed Switching
•Wide SOA
KSC5026M
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
IB
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage 1100 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current (DC) 1.5 A
Collector Current (Pulse) 5 A
Base Current 0.8 A
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 0.75A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A 2 V
CE
(sat) Base-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A 1.5 V
V
BE
C
ob
f
T
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= -IB2 = 0.15A
I
B1
L = 5mH, Clamped
= 800V, IE = 0 10 µA
CB
= 5V, IC = 0 10 µA
EB
= 5V, IC = 0.1A
CE
= 5V, IC = 0.5A
V
CE
=10V, IE = 0, f = 1M Hz 35 pF
CB
= 10V, IC = 0.1A 15 MHz
CE
= 400V
CC
I
= 5IB1 = -2.5IB2 = 1A
C
= 400Ω
R
L
800 V
10
40
8
0.5 µs
hFE Classification
Classification N R O
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
10 ~ 20 15 ~ 30 20 ~ 40
Typical Characteristics
KSC5026M
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
[A], COLLECTOR CURRENT
C
0.4
I
0.2
0.0
012345678910
VCE[V], COLLECTOR-EMITTER V OLTAG E
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
IB = 20mA
IB = 10mA
IB = 5mA
IB = 0
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 5 I
B
1.6
1.4
1.2
1.0
0.8
0.6
0.4
[A], COLLECTOR CURRENT
C
I
0.2
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
VCE = 5V
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
0.1 1 10
Figure 5. Switching Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
t
STG
t
ON
t
F
IC[A], COLLECTOR CURRENT
Figure 4. Base-Emitter On Voltage
10
IC(max).(Pulse)
IC(max)
1
0.1
0.01
[A], COLLECTO R CURRENT
C
I
1E-3
1 10 100 1000
VCE[V], COLLECTOR-E MI T TE R VOLT A GE
100
1ms
µ
s
10ms
DC
Rev. B2, December 2002
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