Fairchild Semiconductor KSC5025 Datasheet
High Voltage and High Reliabilty
• High Speed Switching
•Wide SOA
KSC5025
KSC5025
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
T
J
T
STG
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current (DC) 15 A
Collector Current (Pulse) 25 A
Base Current 4 A
Collector Dissipation (TC=25°C) 100 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 5A, IB1 = -IB2 = 2A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 6A, IB = 1.2A 1.5 V
V
BE
C
ob
fT
tON
tSTG
tF
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
L = 500µH, Clamped
= 500V, IE = 0 10 µA
CB
= 5V, IC = 0 10 µA
EB
= 5V, IC = 1.2A
CE
V
= 5V, IC = 6A
CE
= 10V, IE = 0, f = 1MHz 160 pF
CB
= 10V, IC = 1.2A 18 MHz
CE
= 200V
CC
= 5IB1 = -2. 5I
I
C
= 28.6Ω
R
L
B2
= 7A
500 V
15
50
8
0.5 µs
hFE Classificntion
Classification R O Y
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
15 ~ 30 20 ~ 40 30 ~ 50
Typical Characteristics
KSC5025
16
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
024681012
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
IB = 1.4A
IB = 1.2A
IB = 1A
IB = 800mA
IB = 600mA
IB = 500mA
IB = 400mA
IB = 300mA
IB = 200mA
IB = 100mA
100
10
, DC CURRENT GAIN
FE
h
IB = 50mA
IB = 20mA
1
0.01 0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10 100
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 5 I
B
16
VCE = 5V
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
10ms
1ms
DC
50µs
100
µ
s
Rev. B1, December 2002
IC=5.I
t
STG
t
ON
t
F
B
100
IC(max).(Pulse)
IC(max)
10
1
0.1
[A], COLLECTO R CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-E MI T TE R VOLT A GE
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