Fairchild Semiconductor KSC5024 Datasheet
High Voltage and High Reliabilty
• High Speed Switching
•Wide SOA
KSC5024
KSC5024
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
T
J
T
STG
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter- Base Voltage 7 V
Collector Current (DC) 10 A
Collector Current (Pulse) 20 A
Base Current 3 A
Collector Dissipation (TC=25°C) 90 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 3.5A, IB1=-IB2=1.4A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
(Sat) Collector-Emitter Saturation Voltage IC = 4A, IB = 0.8A 1 V
V
CE
(Sat) Base-Emitter Saturation Voltage IC = 4A, IB = 0.8A 1.5 V
V
BE
C
ob
fT
ton
ts
tf
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn ON Time V
Storage Time 3 µs
Time Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
L = 500µH, Clamped
= 500V, IE = 0 10 µA
CB
= 5V, IC = 0 10 µA
EB
= 5V, IC = 0.8A
CE
V
=5V, IC = 4A
CE
= 10V, IE=0, f = 1MHz 12 0 pF
CB
= 10V, IC=0.8A 18 MHz
CE
= 200V
CC
= 5IB1=-2.5I
I
C
= 40Ω
R
L
B2
=5A
500 V
15
50
8
0.5 µs
hFE Classificntion
Classification R O Y
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
15 ~ 30 20 ~ 40 30 ~ 50
Typical Characteristics
KSC5024
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
024681012
IB = 1.6A
IB = 1.4A
IB = 1.2A
IB = 1A
IB = 800mA
IB = 600mA
IB = 500mA
IB = 400mA
IB = 300mA
IB = 200mA
IB = 100mA
IB = 50mA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 5 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
4
3
2
1
[A], COLLECTOR CURRENT
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1. 2 1. 4 1.6
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
[µs], TIME
F
, t
STG
, t
0.1
ON
t
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
10ms
50µs
100
1ms
DC
µ
s
Rev. A1, June 2001
IC=5.I
B
t
STG
t
t
ON
F
100
IC(max).(Pulse)
10
IC(max)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
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