Fairchild Semiconductor KSC5020 Datasheet
High Voltage, High Quality
• High Speed Switching : tF=0.1µs
•Wide SOA
KSC5020
KSC5020
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
IB
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current (DC) 3 A
Collector Current (Pulse) 6 A
Base Current (DC) 1 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1=-IB2= 0.6A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V
V
BE
C
ob
f
T
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
L = 2mH, Clamped
= 500V, IE = 0 10 µA
CB
= 5V , IC = 0 10 µA
EB
= 5V, IC = 0.3A
CE
V
= 5V, IC = 1.5A
CE
= 10V, f = 1MHz 50 pF
CB
= 10V, IC = 0.3A 18 MHz
CE
= 200V
CC
=5IB1 = -2.5IB2=2A
I
C
= 100Ω
R
L
500 V
15
50
8
0.5 µs
hFE Classification
Classification R O Y
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
15 ~ 30 20 ~ 40 30 ~ 50
Typical Characteristics
KSC5020
5
4
3
2
IB = 500mA
IB = 400mA
IB = 300mA
IB = 200mA
IB = 100mA
[A], COLLECTOR CURRENT
C
1
I
IB = 50mA
1000
100
10
, DC CURRENT GAIN
FE
h
IB = 20mA
0
0246810
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
IC = 5 I
B
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
VCC= 200V
IC= 5IB1= -2.5I
t
STG
B2
t
ON
t
F
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
4
3
2
1
[A], COLLECTOR CURRE NT
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 4. Turn On, Storage a nd Fa ll Time vs.
Collector Current
P
C
=40W
1ms
10ms
DC
100
10
ICP(max)
IC(max)
1
0.1
0.01
[A], COLLECTO R CURRENT
C
I
1E-3
1 10 100 1000
VCE[V], COLLECTOR-E MI T TE R VOLT A GE
Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area
50µs
100
µ
s
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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