Fairchild Semiconductor KSC4010 Datasheet
Audio Power Amplifier
• High Current Capability : IC=6A
• High Power Dissipation
•Wide S.O.A
• Complement to KSA3010
KSC4010
KSC4010
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current (DC) 6 A
Collector Current (Pulse) 12 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage Temperature - 50 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
BV
CEO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 0.5A - - 2.5 V
V
CE
(on) Base-Emitter ON Voltage VCE= 5V, IC= 5A - - 1.5 V
V
BE
f
T
C
ob
Collector Cut-off Current VCB= 120V, IE= 0 - - 10 µA
Emitter Cut-off Current VEB= 5V, IC= 0 - - 10 µA
Collector-Emitter Breakdown Voltage IC= 5A,, IB= 0 120 - - V
DC Current Gain VCE= 5V, IC= 1A, 55 - 160
Current Gain Bandwidth Product VCE= 5V, IC= 1A - 30 - MHz
Output Capacitance VCB=10V, IE=0, f=1MHz - 90 - pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
hFE Classification
Classification R O
h
FE
©2001 Fairchild Semiconductor Corporation Rev. B2, Septmeber 2001
55 ~ 110 80 ~ 160
Typical Characteristics
KSC4010
10
9
8
7
6
5
4
3
(A), COLLECTOR CURRENT
C
2
I
1
0
012345678910
=100mA
I
B
=90mA
I
B
=80mA
I
B
=70mA
I
B
=60mA
I
B
=50mA
I
B
=40mA
I
b
IB=30mA
IB=20mA
VCE(V), COLLECTOR EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat), SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
TC=25oC
TC=100oC
IC(A), COLLECTOR CURRENT
IB=10mA
IC=10I
1000
TC=100oC
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10
TC=25oC
VCE=5V
IC(A), COLLECTOR CURRENT
B
10
9
8
7
6
5
4
3
2
(A), COLL E CTOR CURRENT
C
I
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
TC=100oC
TC=25oC
VCE=5V
VBE(V), BASE EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
100
IC MAX. (Pulse)
10
IC MAX. (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
0.01
0.1 1 10 100
V
[V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
100ms
DC
10ms
MAX
CEO
V
100
90
80
70
60
50
40
30
(W), POWER DISSIPATION
20
C
P
10
0
0 255075100125150175
TC(oC), CASE TEMPERATURE
Rev. B2, Septmeber 2001
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