Fairchild Semiconductor KSC3953 Datasheet
KSC3953
CRT Display Video Output
• High Current Gain Bandwidth Product : fT=400MHz(Typ.)
• High Collector-Emitter Voltage : V
• Low Reverse Transfer Capacitance : C
CEO
=120V
=1.7pF(Typ.)
re
KSC3953
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
PC
P
C
T
J
T
STG
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 3 V
Collector Current (DC) 200 mA
Collector Current (Pulse) 400 mA
Collector Dissipation (Ta=25°C) 1.3 W
Collector Dissipation (TC=25°C) 8 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
EBO
BVEBO
ICBO
IEBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 30mA, IB = 3mA 1.0 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 30mA, IB = 3mA 1.0 V
V
BE
f
T
C
ob
Cre
Collector-Base Breakdown Voltage IC = 10µA, IB = 0 120 V
Collector-Emitter Breakdown Voltage IC = 1mA, R
Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 3 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Reverse Transfer Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
BE
= 80V, IE = 0 0.1 µA
CB
= 2V, IC = 0 1.0 µA
EB
= 10V, IC = 10mA
CE
V
= 10V, IC = 100mA
CE
= 10V,IC = 50mA 400 M Hz
CE
= 30V, f = 1MHz 2.1 pF
CB
= 30V, f = 1MHz 1.7 pF
CB
= ∞ 120 V
40
120
20
h
Classificntion
FE
Classification C D
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 60 ~ 120
Typical Characteristics
KSC3953
100
80
60
40
20
[mA], COLLECTOR CURRENT
C
I
0
048121620
IB = 0.9mA
IB = 0.8mA
IB = 0.7mA
IB = 0.6mA
IB = 0.5mA
IB = 0.4mA
IB = 0.3mA
IB = 0.2mA
IB = 0.1mA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
IC = 10 I
1000
VCE = 10V
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
120
B
100
80
60
40
VCE = 10V
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
1 10 100 1000
IC[mA], COLLECTOR CURRENT
20
[mA], COLLECTOR CURRENT
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
100
10
1
[pF], CAPACITANCE
ob
C
0.1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
f = 1MHz
= 0
I
E
100
10
1
[pF], CAPACITANCE
re
C
0.1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Reverse Capacitance
f = 1MHz
IE = 0
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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