Fairchild Semiconductor KSC388 Datasheet
KSC388
TV Final Picture IF Amplifier Applications
•GPE= 33dB (TYP) at f=45MHz
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
KSC388
1
1. Emitter 2. Base 3. Collector
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 4 V
Collector Current 50 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=15mA, IB=1.5mA 0.2 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=15mA, IB=1.5mA 1.5 V
V
BE
C
ob
C
c·rbb´
f
T
G
PE
Collector-Base Breakdown Voltage IC=10µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 25 V
Collector Cut-off Current VCB=30V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=12.5V, IC=12.5mA 20 200
Output Capacitance VCB=10V, IE=0, f=1MHz 0.8 2 pF
Collector-Base Time Constant VCB=10V, IC=1mA
Current Gain Bandwidth Product VCE=12.5V, IC=12.5mA 300 MHz
Power Gain VCC=12.5V, IC=12.5mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
25 ps
f=30MHz
28 33 36 dB
f=45MHz
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSC388
16
14
12
10
8
6
4
[mA], COLLECTOR CURRENT
C
I
2
0
0 4 8 12162024
IB = 70µA
IB = 60µA
IB = 50µA
IB = 40µA
IB = 30µA
IB = 20µA
IB = 10µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10
IC[mA], COLLECTOR CURRENT
IC=10I
1000
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
VCE=12.5V
IC[mA], COLLECTOR CURRENT
B
1000
100
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE=6V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
[pF], CAPACITANCE
ob
[pF],C
ib
C
0.1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Input Capacitance
Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
f = 1MHz
IE=0
C
ib
C
ob
1000
100
10
0.1 1 10 100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE=12.5V
Figure 6. Current Gain Bandwidth Product
Rev. A2, September 2002
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