Fairchild Semiconductor KSC3296 Datasheet
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC3296
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 150 V
V
CEO
Collector-Emitter Voltage 150 V
V
EBO
Emitter-Base Voltage 5 V
IC
Collector Current(DC) 1.5 A
IB
Base Current 0.5 A
P
C
Collector Dissipation (TC=25°C) 20 W
T
J
Junction Temperature 150 °C
T
STG
Storage T emperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= 120V, IE = 0 10 µA
I
EBO
Emitter Cut-off Cur re n t V
EB
= 5V, IC = 0 10 µA
h
FE
DC Current Gain V
CE
= 10V, IC = 500mA 40 75 140
V
CE
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 1.5 V
V
BE
(on) Base-Emitter ON Voltage V
CE
= 10V, IC = 500mA 0.65 0.75 0.85 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, IC = 500mA 4 MHz
C
ob
Output Capacitance V
CB
= 10V, f = 1MHz 35 pF
KSC3296
Power Amplifier Applications
• Complement to KSA1304
1
1.Base 2.Collector 3.Emitter
TO-220F
©2000 Fairchild Semiconductor International
KSC3296
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 10V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 10 I
B
V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
1s
IC MAX. (DC)
100ms
V
CEO
MAX.
Dissipation Limited
10ms
S/b Limited
IC MAX. (Pulse)
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
P
C
[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
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