Fairchild Semiconductor KSC3265 Datasheet
KSC3265
KSC3265
Low Frequency Amplifier
• Complement to KSA1298
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
∗ Refer to KSD261 for graphs
Collector-Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 5 V
Collector Current 800 mA
Base Current 160 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=20mA 0.4 V
V
CE
(on) Base-Emitter On Voltage VCE=1V, IC=10mA 0.5 0.8 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=1mA, IC=0 5 V
Collector Cut-off Current VCB=30V, IE=0 100 nA
Emitter Cut-off Current VEB=5V, IC=0 100 nA
DC Current Gain VCE=1V, IC=100mA
Current Gain Bandwidth Product VCE=5V, IC=10mA 120 MHz
Output Capaci tance VCB=10V, IE=0, f=1MHz 13 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=6V, IC=800mA
CE
100
40
320
h
Classification
FE
Classification O Y
h
FE
100 ~ 200 160 ~ 320
Marking
K1O
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Package Dimensions
0.40
±0.03
KSC3265
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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