Fairchild Semiconductor KSC3233 Datasheet
KSC3233
High Speed Switching
• Low Collector-Emitter Saturation Voltage
• High speed Switching : t
• Collector-Emitter Voltage : V
• Lead formed for Surface Mount Applications (D-PAK, “ -D “ Suffix)
=1µs (Max.) @ IC=0.8A
F
=400V
CEO
KSC3233
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
IB
P
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current 2 A
Base Current 0.5 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
BVCEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A 1.5 V
V
BE
t
ON
tSTG
tF
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 500 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 400 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Turn ON Time V
Storage Time 2.5 µs
Fall Time 1 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
CB
EB
CE
V
CE
CC
= -I
1
B1
= 250Ω
R
L
= 400V, IE = 0 100 µA
= 7V, IC = 0 1 mA
= 5V, IC = 0.1A
= 5V, IC = 1A
= 200V, IC= 0.8A
= 0.08A
B2
20
8
1 µs
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
KSC3233
2.0
1.6
1.2
0.8
[A], COLLECTOR CURRENT
0.4
C
I
0.0
0246810
= 180mA
I
B
= 120mA
I
B
= 80mA
I
B
= 60mA
I
B
= 40mA
I
B
I
B
IB = 10mA
IB = 0
= 20mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1E-3 0.01 0.1 1 10
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 5 I
VBE(sat)
100
VCE = 5V
10
1
, DC CURRENT GAIN
FE
h
0.1
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
2.4
B
2.0
1.6
1.2
0.8
[A], COLLECTOR CURRENT
0.4
C
I
0.0
0.00.20.40.60.81.01.2
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
IC MAX. (Pulse)
100ms
IC MAX. (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter on Voltage
10ms
3ms
DC
1ms
500us
10us
100us
32
28
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A1, June 2001
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