Fairchild Semiconductor KSC3114 Datasheet
Audio Frequency Amplifier
High Frequency OSC.
• High Current Gain : hFE=280~560
• Collector-Base Voltage : V
• High Current Gain Bandwidth Product : f
CBO
=60V
KSC3114
=300MHz (TYP)
T
KSC3114
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 12 V
Collector Current 150 mA
Collector Power Dissipation 250 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.15 0.3 V
V
CE
f
T
C
ob
NF Noise Figure V
Collector-Base Breakdown Voltage IC=100µA, IE=0 60 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 50 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 12 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=6V, IC=1.0mA 280 560
Current Gain Bandwidth Product VCE=6V, IC=10mA 300 MHz
Output Capacitance VCB=6V, IE=0, f=1MHz 2.5 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=6V, IC=0.5mA
CE
f=1KHz, R
=500Ω
S
4.0 dB
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSC3114
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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