Fairchild Semiconductor KSC3076 Datasheet
Power Amplifier Applications
• Low Collector-Emitter Saturation Voltage
• Complement to KSA 1241
KSC3076
KSC3076
1
I-PACK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
IB
P
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current 2 A
Base Current 1 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.05A 0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.05A 1.2 V
V
BE
f
T
C
ob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 50 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1 µs
Fall Time 0.1 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 50V , IE = 0 1 µA
CB
= 5V, IC = 0 1 µA
EB
= 2V, IC= 0.5A
CE
V
= 2V, IC = 1.5A
CE
= 2V, IC = 0.5A 100 MHz
CE
= 10V, f = 1MHz 30 pF
CB
= 30V, IC = 1A
CC
= - I
= 30Ω
= 0.05A
B2
1
R
B1
L
70
40
0.1 µs
240
h
Classification
FE1
Classification O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Package Demensions
6.60
5.34
(0.50) (0.50)(4.34)
±0.20
±0.20
I-PAK
2.30
0.50
KSC3076
±0.20
±0.10
±0.20
0.60
±0.10
0.80
MAX0.96
0.76
±0.10
2.30TYP
[2.30±0.20]
±0.20
0.70
±0.20
1.80
2.30TYP
[2.30±0.20]
±0.20
6.10
±0.30
9.30
0.50
±0.30
16.10
±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Loading...