Fairchild Semiconductor KSC3074 Datasheet
High Power Switching
• Complement to KSA1244
KSC3074
KSC3074
1
I-PACK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
IB
P
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current 5 A
Base Current 1 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC= 3A, IB = 0.15A 0.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC= 3A, IB = 0.15A 0.9 1.2 V
V
BE
f
T
C
ob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 50 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1 µs
Fall Time 0.1 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 50V, IE = 0 1 µA
CB
= 5V, IC = 0 1 µA
EB
= 1V, IC = 1A
CE
V
= 1V, IC = 3A
CE
= 4V, IC = 1A 120 MHz
CE
= 10V, f = 1MHz 80 pF
CB
= 30V, IC= 3A
CC
= - I
= 10Ω
L
B2
=0.15A
I
R
B1
70
240
30
0.1 µs
hFE Classification
Classification O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Typical Characteristics
KSC3074
= 90mA
I
B
IB = 80mA
IB = 70mA
IB = 60mA
IB = 50mA
IB = 40mA
IB = 30mA
IB = 20mA
IB = 10mA
IB = 0
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
012345678
= 100mA
I
B
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC = 20 I
1000
VCE = 1V
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
B
[A], COLLECTOR CURRENT
C
I
VCE = 1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
IC MAX. (Pulse)
IC MAX. (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.1 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Figure 4. Base-Emitter on Voltage
1ms
10ms
DC
MAX.
CEO
V
32
28
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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