Fairchild Semiconductor KSC3073 Datasheet
Power Amplifier Application
• Complement to KSA1243
KSC3073
KSC3073
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
IB
P
CBO
CEO
EBO
C
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 3 A
Base Current 0.6 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (T
T
J
T
STG
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BVEBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.3 0.8 V
V
CE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 30 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
=25°C) 15 W
C
TC=25°C unless otherwise noted
= 20V, IE = 0 1 µA
CB
= 5V, IC = 0 1 µA
EB
= 2V, IC = 0.5A
CE
V
= 2V, IC = 2.5A
CE
= 2V,IC = 0.5A 0.75 1 V
CE
= 2V, IC = 0.5A 100 MHz
CE
= 10V, f =1MHz 35 pF
CB
70
25
240
hFE Classification
Classification O Y
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
70 ~ 140 120 ~ 240
Typical Characteristics
KSC3073
= 40mA
I
B
= 30mA
I
B
= 20mA
I
B
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
= 15mA
I
B
= 10mA
I
B
IB = 5mA
IB = 3mA
IB = 0
1000
VCE = 2V
100
10
, DC CURRENT GAIN
FE
h
1
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VCE = -2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter on Voltage
10
IC MAX. (Pulse)
IC MAX. (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.1 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
10ms
1ms
DC
MAX.
CEO
V
24
21
18
15
12
9
6
[W], POWER DISSIPATION
C
P
3
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. B, September 2002
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