Fairchild Semiconductor KSC2883 Datasheet
Low Frequency Power Amplifier
• 3W Output Application
• Collector Dissipation : P
• Complement to KSA1203
=1~2W in Mounted on Ceramic Board
C
KSC2883
KSC2883
1
SOT-89
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
PC*
T
J
T
STG
* Mounted on Ceramic Board (250mm2x0.8mm)
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 1.5 A
Base Current 0.3 A
Collector Power Dissipation 500
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=1.5A, IB=30mA 2.0 V
V
CE
(on) Base-Emitter On Voltage VCE=2V, IC=500mA 1.0 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC=10µA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=1mA, IC=0 5 V
Collector Cut-off Current VCB=30V, IE=0 100 nA
Emitter Cut-off Current VBE=5V, IC=0 100 nA
DC Current Gain VCE=2V, IC=500mA 100 320
Current Gain Bandwidth Product VCE=2V, IC=500mA 120 MHz
Output Capaci tance VCB=10V, IE=0, f=1MHz 40 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
1,000
mW
mW
h
Classification
FE
Classification O Y
h
FE
100 ~ 200 160 ~ 320
Marking
SHX
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSC2883
1.6
IB = 10mA
1.2
0.8
0.4
[A], COLLECTOR CURRENT
C
I
0.0
0 2 4 6 8 10 12 14 16
IB = 8mA
IB = 6mA
IB = 5mA
IB = 4mA
IB = 3mA
IB = 2mA
IB = 1mA
VCE [V], COLLECTOR-EMITTER VOLTAGE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
[A], COLLECTOR CURRENT
C
I
0.2
0.0
0.0 0.4 0.8 1.2 1.6
VBE[V], SATURATION VOLTAGE
Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage
10000
1000
100
, DC CURRENT GAIN
10
FE
h
1
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
VCE = 2V
10
1
0.1
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
1 10 100 1000 10000
IC [mA], COLLECTOR CURRENT
VCE = 2V
IC = 50 I
B
Figure 3. DC Current Gain Figure 4. Coll e ctor-Emitter Sat ur a tion Voltage
10
IC MAX. (Pulse)
IC MAX. (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
Ta = 25oC
Single Pulse
0.01
0.1 1 10 100
10ms
100ms
1s
VCE [V], COLLECTOR-EMITTER VOLATGE
1ms
MAX.
CEO
V
1.6
1.2
Mounted on Ceramic Board (250mm
0.8
0.4
[W], POWER DISSIPATION
C
P
0.0
0 50 100 150 200
2
x 0.8mm)
TA [oC], AMBIENT TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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