Fairchild Semiconductor KSC2859 Datasheet
KSC2859
Low Frequency Power Amplifier
• Complement to KSA1182
NPN Epitaxial Silicon Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
KSC2859
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 35 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 500 mA
Collector Power Dissipation 150 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CEO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.1 0.25 V
V
CE
(on) Base-Emitter On Voltage VCE=1V, IC=100mA 0.8 1.0 V
V
BE
f
T
C
ob
h
FE1
Collector Cut-off Current VCB=35V, IE=0 0.1 µA
Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
DC Current Gain VCE=1V, IC=100mA
Current Gain-Bandwidth Product VCE=6V, IC=20mA 300 MHz
Output Capacitance VCB=6V, IE=0, f=1MHz 7 pF
Classification
Classification O Y
h
FE1
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=6V, IC=400mA
CE
70 ~ 140 120 ~ 240
70
25
240
Marking
E1O
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSC2859
50
45
40
35
30
25
20
15
10
[mA], COLLECTOR CURRENT
C
I
5
0
012345678910
IB = 400µA
IB = 350µA
IB = 350µA
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage
1000
100
10
, DC CURRENT GAIN
FE
h
IB = 100µA
IB = 50µA
VCE = 1V
100
VCE = 1V
80
60
40
20
[mA], COLLECTOR CURRENT
C
I
0
0.2 0.4 0.6 0.8 1.0
VBE[mV], SATURATION VOLTAGE
f = 1MHz
= 0
I
E
10
[pF], OUTPUT CAPACITANCE
ob
C
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain Figure 4. Output Capacit a nc e
10
1
0.1
(sat) [V], SATURATION VOLTAGE
BE
(sat), V
CE
0.01
V
0.1 1 10 100
IC [mA], COLLECTOR CURRENT
Figure 5. Satura tion Voltage
©2002 Fairchild Semiconductor Corporation
VBE(sat)
VCE(sat)
IC = 10 I
1
110100
VCB[V], COLLECTOR-BASE VOLTAGE
B
Rev. A2, September 2002
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