Fairchild Semiconductor KSC2786 Datasheet
KSC2786
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Oscillator
• High Current Gain Bandwidth Product : fT=600MHz (TYP)
• High Power Gain : G
=22dB at f=100MHz
PE
KSC2786
1
1.Emitter 2. Collector 3. Base
TO-92S
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 4 V
Collector Current 20 mA
Collector Power Dissipation 250 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.72 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.1 0.3 V
V
CE
f
T
C
ob
C
c·rbb’
NF Noise Figure V
G
PE
Collector-Base Breakdown Voltage IC=10µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 20 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 V
Collector Cut-off Current VCB=30V, IE=0 0.1 µA
Emitter Cut-off Current VEB=4V, IC=0 0.1 µA
DC Current Gain VCE=6V, IC=1mA 40 240
Current Gain Bandwidth Product VCE=6V, IC=1mA 400 600 MHz
Output Capacitance VCB=6V, IE=0, f=1MHz 1.2 pF
Collector-Base Time Constant VCE=6V, IC=1mA
Power Gain VCE=6V, IC=1mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=31.9MHz
=6V, IC=1mA
CE
=50Ω, f=100MHz
R
S
f=100MHz
12 15 ps
3.0 5.0 dB
18 22 dB
hFE Classification
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSC2786
20
18
16
14
12
10
8
6
4
[mA], COLLECTOR CURRENT
C
I
2
0
0 2 4 6 8 10 12 14 16 18 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 110µA
IB = 100µA
IB = 90µA
IB = 80µA
IB = 70µA
IB = 60µA
IB = 50µA
IB = 40µA
IB = 30µA
IB = 20µA
IB = 10µA
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE [V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage
1000
VCE = 6V
100
, DC CURRENT GAIN
FE
h
10000
1000
100
VCE = 6 V
VCE = 6V
10
110
IC [mA], COLLECTOR CURRENT
Figure 3. DC Current Gain Figure 4. f
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10
IC [mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IC = 10 I
B
10
110100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC [mA], COLLECTOR CURRENT
- I
T
C
10
f = 1MHz
= 0
I
E
1
[pF], OUTPUT CAPACITANCE
ob
C
0.1
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Saturation Voltage Figure 6. Output Capacitance
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2786
Typical Characteristics
100
10
1
0.1
[ms], SUSCEPTANCE
[ms], CONDUCTANCE
ie
ie
b
g
0.01
0.1 1 10 100
b
ie
g
ie
b
ie
g
ie
IC [mA], COLLECTOR CURRENT
Figure 7. yie - f Figure 8. yfe - f
-g
0.0
0.1
0.2
0.3
0.4
[ms], SUSCEPTANCE
[ms], CONDUCTANCE
re
re
b
g
0.5
0.1 1 10 100
re
-g
re
-b
re
IC [mA], COLLECTOR CURRENT
10.7 MHz
100 MHz
10.7 MHz
-b
re
100 MHz
10.7 MHz
100 MHz
(Continued)
VCE = 6 V
VCE = 6 V
1000
100
g
fe
10
[ms], SUSCEPTANCE
[ms], CONDUCTANCE
fe
fe
b
g
1
0.1 1 10 100
g
-b
fe
fe
-b
fe
IC [mA], COLLECTOR CURRENT
1
0.1
b
oe
[ms], SUSCEPTANCE
[ms], CONDUCTANCE
oe
oe
b
g
0.01
0.1 1 10 100
100 MHz
b
oe
g
oe
g
oe
IC [mA], COLLECTOR CURRENT
VCE = 6 V
10.7 MHz
100 MHz
100 MHz
10.7 MHz
VCE = 6 V
100 MHz
10.7 MHz
10.7 MHz
1000
100
10
[ms], SUSCEPTANCE
[ms], CONDUCTANCE
ib
ib
b
g
1
0.1 1 10 100
IC [mA], COLLECTOR CURRENT
Figure 11. yib - f Figure 12. yfb - f
©2002 Fairchild Semiconductor Corporation
Figure 9. yre - f Figure 10. yoe - f
10.7 MHz
g
ib
VCE = 6 V
100 MHz
100 MHz
g
ib
10.7 MHz
-b
ib
-b
ib
1000
g
100
10
[ms], SUSCEPTANCE
[ms], CONDUCTANCE
fb
fb
b
g
1
0.1 1 10 100
fb
g
fb
b
fb
b
fb
IC [mA], COLLECTOR CURRENT
VCE = 6 V
10.7 MHz
100 MHz
100 MHz
10.7 MHz
Rev. A2, September 2002
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