Fairchild Semiconductor KSC2784 Datasheet
KSC2784
Audio Frequency Low Noise Amplifier
• Complement to KSA1174
KSC2784
1
1.Emitter 2. Collector 3. Base
TO-92S
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current 50 mA
Base Current 10 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(on) Base Emitter On Voltage VCE=6V, IC=1mA 0.55 0.59 0.65 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.07 0.3 V
V
CE
f
T
C
ob
NL Noise Level 25 40 mV
Collector Cut-off Current VCB=120V, IE=0 50 nA
Emitter Cut-off Current VEB=5V, IC=0 50 nA
DC Current Gain VCE=6V, IC=0.1mA
Current Gain Bandwidth Product VCE=6V, IC=1mA 50 110 MHz
Output Capacitance VCB=30V, IE=0, f=1MHz 1.6 2.5 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=6V, IC=1mA
CE
150
200
580
600 1200
h
Classification
FE2
Classification P F E U
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200
Typical Characteristics
KSC2784
10
8
6
4
2
[mA], COLLECTOR CURRENT
C
I
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics Figure 2. Static Characteristics
1000
800
600
400
, DC CURRENT GAIN
FE
h
200
0
0.01 0.1 1 10 100
IC [mA], COLLECTOR CURRENT
VCE = 6 V
Pulse Test
IB = 16µA
IB = 14µA
IB = 12µA
IB = 10µA
IB = 8µA
IB = 6µA
IB = 4µA
IB = 2µA
1.0
0.8
0.6
0.4
0.2
[mA], COLLECTOR CURRENT
C
I
0.0
0 20406080100
IB = 1.4µA
IB = 1.2µA
IB = 1.0µA
IB = 0.8µA
IB = 0.6µA
IB = 0.4µA
IB = 0.2µA
VCE [V], COLLECTOR-EMITTER VOLTAGE
10
1
(sat)
V
BE
IC = 10 I
Pulse Test
B
0.1
(sat) [V], SATURATION VOLTAGE
BE
(sat), V
CE
0.01
V
0.1 1 10 100
VCE (sat)
IC [mA], COLLECTOR CURRENT
Figure 3. DC Currnet Gain Figure 4. Saturation Voltage
10000
1000
100
10
0.1 1 10 100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
©2002 Fairchild Semiconductor Corporation
IC [mA], COLLECTOR CURRENT
Figure 5. f
VCE = 10V
10
1
[pF], OUTPUT CAPACITANCE
ob
C
0.1
110100
f = 1 MHz
I
= 0
E
VCB[V], COLLECTOR-BASE VOLTAGE
- I
T
C
Figure 6. Output Capacit a nc e
Rev. A2, September 2002
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