Fairchild Semiconductor KSC2756 Datasheet
Mixer for VHF TV Tuner
• High Conversion Gain : GCE = 23dB (TYP.)
NPN Epitaxial Silicon Transistor
KSC2756
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
KSC2756
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 4 V
Collector Current 30 mA
Collector Power Dissipation 150 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ +150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.5 V
CE
f
T
C
RE
G
CE
NF Noise Figure V
Collector Cut-off Current VCB=20V, IE=0 0.1 µA
DC Current Gain VCE=10V, IC=5mA 60 120 240
Current Gain Bandwidth Product VCE=10V, IC=5mA 500 850 MHz
Reverse Transfer Capacitance VCB=10V, IE=0, f=1MHz 0.35 0.5 pF
Conversion Gain VCE=10V, IC=3mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f
=200MHz, fIF=58MHz
RF
=10V, IC=3mA
CE
=200MHz, fIF=58MHz
f
RF
15 23 dB
6.5 dB
hFE Classification
Classification R O Y
h
FE
60 ~ 120 90 ~ 180 120 ~ 240
Marking
H2O
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSC2756
10
8
6
4
2
[mA], COLLECTOR CURRENT
C
I
0
048121620
IB = 90µA
IB = 80µA
IB = 70µA
IB = 60µA
IB = 50µA
IB = 40µA
IB = 30µA
IB = 20µA
IB = 10µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Charateristics Figure 2. DC Current Gain
10000
1000
VBE(sat)
100
(sat)[mV], SATURATION VOLTAGE
(sat)[mV], SATURATION VOLTAGE
BE
CE
V
V
10
0.1 1 10 100
VCE(sat)
IC [mA], COLLECTOR CURRENT
IC = 10 I
1000
VCE = 10V
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
IC [mA], COLLECTOR CURRENT
10000
B
1000
100
10
0.1 1 10 100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
VCE = 10 V
IC [mA], COLLECTOR CURRENT
Figure 3. Saturation Voltage Figure 4. f
10
1
0.1
[pF], REVERSE TRANSFER CAPACITANCE
re
C
0.01
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Cre - V
©2002 Fairchild Semiconductor Corporation
CB
f = 1 MHz
I
= 0
E
- I
T
C
200
150
100
50
[mW], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175 200
Ta[oC], AMBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A2, September 2002
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