Fairchild Semiconductor KSC2690A Datasheet
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
KSC2690/2690A
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Collector-Base Voltage
Collector- Emitter Voltage
Emitter-Base Voltage 5 V
Collector Current (DC) 1.2 A
*Collector Current (Pulse) 2.5 A
Base Current(DC) 0.3 A
Collector Dissipation (Ta=25°C) 1.2 W
Collector Dissipation (TC=25°C) 20 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.4 0.7 V
V
CE
(sat) * Base-Em itter Saturation Voltage IC = 1A, IB = 0.2A 1 1.3 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pu lsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
: KSC2690
: KSC2690A
: KSC2690
: KSC2690A
TC=25°C unless otherwise noted
= 120V, IE = 0 1 µA
CB
= 3V, IC= 0 1 µA
EB
= 5V, IC = 5mA
CE
= 5V, IC = 0.3A
V
CE
= 5V, IC = 0.2A 155 MHz
CE
=10V, IE =0, f = 1MHz 19 pF
CB
120
160
120
160
3560105
140 320
V
V
V
V
h
Classificntion
FE
Classification R O Y
h
FE2
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 120 100 ~ 200 160 ~ 320
Typical Characteristics
KSC2690/2690A
1.6
1.4
IB=10mA
IB=9mA
1.2
IB=8mA
1.0
0.8
0.6
0.4
[A], COLLECTOR CURRENT
0.2
C
I
0.0
0 1020304050607080
IB=7mA
IB=6mA
IB=5mA
IB=4mA
Pulse Test
IB=3mA
IB=2mA
IB=1mA
IB=0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VCE(sat)
(sat), V
BE
V
0.01
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
VBE(sat)
IC = 5 I
Pulse Test
1000
100
10
, DC CURRENT GAIN
FE
h
1
1E-3 0.01 0.1 1 10
0.001
VCE = 5V
Pulse Test
IC[A], COLLECTOR CURRENT
1000
B
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100 1000
f = 1MHz
= 0
I
E
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
1
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
0.01 0.1 1
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Collector Output Capacitance
10ms
Dissipation
Limited
KSC2690 V
1ms
DC (PW = 50ms)
S/b Limited
CEO
PW = 100us
MAX
KSC2690A
V
MAX
CEO
Rev. A, February 2000
VCE = 5V
Pulse Test
10
1
IC(max) Pulse
IC(max) DC
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
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