Fairchild Semiconductor KSC2682 Datasheet
KSC2682
Audio Frequency Power Amplifier
• Complement to KSA1142
KSC2682
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
PC
PC
T
J
T
STG
Collector-Base Voltage 180 V
Collector-Emitter Voltage 180 V
Emitter-Base Voltage 5 V
Collector Current 100 mA
Collector Dissipation (Ta=25°C) 1.2 W
Collector Dissipation (TC=25°C) 8 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) * Collector-Emitter Saturation Voltage IC = 50mA, IB = 5mA 0.12 0.5 V
V
CE
(sat) * Base-Em itter Saturation Voltage IC = 50mA, IB = 5mA 0.8 1.5 V
V
BE
f
T
C
ob
NF Noise Figure V
* Pulse Test: PW≤350µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 180V, IE = 0 1.0 µA
CB
= 3V, IC= 0 1.0 µA
EB
= 5V, IC = 1mA
CE
V
= 5V, IC = 10mA
CE
= 10V , IC = 20mA 200 MHz
CE
V
= 10V , IE = 0
CB
f = 1MHz
= 10V , IC = 1mA
CE
= 10KΩ, f = 1kHz
R
S
90
100
190
200 320
3.2 5.0 pF
4dB
hFE Classificntion
Classification O Y
h
FE2
©2000 Fairchild Semiconductor International Rev. A, February 2000
100 ~ 200 160 ~ 320
Typical Characteristics
KSC2682
IB=400uA
IB=350uA
IB=300uA
IB=250uA
160
140
120
IB=500uA IB=450uA
100
80
60
40
Ic[mA], COLLECTOR CURRENT
20
0 20 40 60 80 100 120 140 160
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
BE
(sat), V
CE
V
0.01
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
Pulse Test
IB=200uA
IB=150uA
IB=100uA
IB=50uA
IB=0
IC= 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
VCE= 5V
IC[mA], COLLECTOR CURRENT
B
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100 1000
IE=0
f=1.0MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
110100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Collector Output Capacitance
VCE = 10V
1000
100
IcMAX(DC)
10
[A], COLLECTOR CURRENT
C
I
1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
10ms
1ms
DC (50ms)
MAX
CEO
V
Rev. A, February 2000
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