Fairchild Semiconductor KSC2669 Datasheet
KSC2669
FM RADIO RF AMP, MIX, CONV, OSC, IF AMP
• High Current Gain Bandwidth Product : fT=250MHz (TYP.)
KSC2669
1
1.Emitter 2. Collector 3. Base
TO-92S
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 35 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 4 V
Collector Current 30 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.65 0.70 0.75 V
V
BE
(sat) Collector-E mitter Saturat ion Voltage IC=10mA, IB=1mA 0.1 0.4 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC=100µA, IE=0 35 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 V
Collector Cut-off Current VCB=30V, IE=0 0.1 µA
Emitter Cut-off Current VEB=4V, IC=0 0.1 µA
DC Current Gain VCE=12V, IC=2mA 40 240
Current Gain Bandwidth Product VCE=10V, IC=1mA 100 250 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 2.0 3.2 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSC2669
10
8
IB = 90µA
IB = 80µA
IB = 70µA
6
IB = 60µA
IB = 50µA
4
IB = 40µA
IB = 30µA
[mA], COLLECTOR CURRENT
2
C
I
IB = 20µA
IB = 10µA
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IC=10I
1000
VCE=12V
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
32
B
28
24
20
16
12
8
[mA], COLLECTOR CURRENT
C
4
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE=12V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
[pF], CAPACITANCE
ob
C
0.1
1 10 100
VCB[V], COLLECTOR BASE VOLTAG E
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
f = 1MHz
IE=0
1000
100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
10
110
IC[mA], COLLECTOR CURRENT
VCE = 10V
Rev. A2, September 2002
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