Fairchild Semiconductor KSC2518 Datasheet

KSC2518

High Speed, High Voltage Switching

• Low Collector Saturation Voltage

• Specified of Reverse Biased SOA With Inductive Load

KSC2518

TO-220

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

=25°C unless otherwise noted

C

1

1.Base 2.Collector 3.Emitter

Symbol Parameter Value Units

V

CBO

V

CEO

VEBO

I

C

I

CP

I

B

P

C

T

J

T

STG

* PW≤350µs, Duty Cycle≤10%

Electrical Characteristics

Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current (DC) 4 A
*Collector Current (Pulse) 8 A
Base Current (DC) 1 A
Collector Dissipation (TC=25°C) 40 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C

TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units

V

(sus) Collector-Emitter Sustaining Voltage IC = 2A, IB1 = 0.4A, L = 1mH 400 V

CEO

(sus)1 Collector-Emitter Sustaining Voltage IC = 2A, IB1 = -IB2 = 0.4A

V

CEX

V

(sus)2 Collector-Emitter Sustaining Voltage IC = 4A, IB1 = 0.8A, -IB2 = 0.4A

CEX

I

CBO

I

CER

I

CEX1

I

CEX2

I

EBO

h

FE1

h

FE2

V

(sat) * Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1 V

CE

(sat) * Base-Em itter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V

V

BE

t

ON

t

STG

t

F

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pu lsed

Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V

Emitter Cut-off Current V
* DC Current Gain V

Turn ON Time V
Storage Time 2.5 µs
Fall Time 0.7 µs

= 125°C, L = 180µH, Clamped

T

a

= 125°C, L = 180µH, Clamped

T

a

= 400V, IE = 0 10 µA

CB

= 400V , R

CE

= 400V, VBE(off) = -1.5V

CE

V

= 400V, VBE(off) = -1.5V @

CE

= 125°C

T

C

= 5V, IC = 0 10 µA

EB

= 5V, IC = 0.3A

CE

= 5V, IC = 1.5A

V

CE

= 150V, IC = 2A

CC

I

= - IB2 = 0.4A

B1

= 75Ω

R

L

= 51Ω @ TC= 125°C 1mA

BE

450 V

400

10

1

20

80

10

1 µs

V

µA

mA

hFE Classification

Classification R O Y

h

FE1

©2000 Fairchild Semiconductor International Rev. A, February 2000

20 ~ 40 30 ~ 60 40 ~ 80

Typical Characteristics

KSC2518

5

4

3

2

1

[A], COLLECTOR CURRENT

C

I

0

0246810

=0.5A

I

B

I

B

I

B

=0.2A

I

B

=0.1A

I

B

=0.05A

I

B

=0.4A

=0.3A

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

10

1

0.1

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

0.01

BE

V

0.01 0.1 1 10

VCE(sat)

IC[A], COLLECTOR CURRENT

VBE(sat)

IC=5I
Plsed

1000

VCE = 5V
Pulsed

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

B

100

10

1

[uS], FALL TIME

f

t

[uS], TURN ON TIME

[uS], STORAGE TIME

on

stg

t

t

0.1

0.1 1 10

IC=5IB1=-5IB2

=150V

Pulsed, V

CC

t

stg

t

f

t

on

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

10

Dissipation Limited

1

0.1

[A], COLLECTOR CURRENT

C

I

0.01
1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Forward Bias Safe Operating Area Figure 6. Reverse Bias Safe Operating Area

©2000 Fairchild Semiconductor International

DC

S/b Limited

10ms

1ms

PW=10us

100us

Figure 4. Turn On, Storage and Fall Time

vs Collector Current

5

4

3

2

1

[A], COLLECTOR CURRENT

C

I

0

0 100 200 300 400 500

VCE(s), COLLECTOR-EMITTER VOLTAGE

V

V

CEX

CEO

(SUS)

(SUS)

Rev. A, February 2000