Fairchild Semiconductor KSC2335F Datasheet
KSC2335F
High Speed, High Voltage Switching
• Industrial Use
KSC2335F
TO-220F
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
1
1.Base 2.Collector 3.Emitter
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
IB
P
C
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current (DC) 7 A
*Collector Current (Pulse) 15 A
Base Current 3.5 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage IC=3A, IB1=0.6A, L = 1mH 400 V
CEO
(sus)1 Collector-Emitter Sustaining Voltage IC=3A,IB1=-IB2=0.6A
V
CEX
(sus)2 Collector-Emitter Sustaining Voltage IC=6A, IB1=2A, IB2=-0.6A
V
CEX
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
h
FE3
V
(sat) * Collector-Emitter Saturation Voltage IC=3A, IB=0.6A 1 V
CE
(sat) * Base-Emitter Saturation Voltage IC=3A, IB=0.6A 1.2 V
V
BE
t
ON
t
STG
t
F
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current VCE=400V, IE = 0 10 µA
Collector Cut-off Current VCE=400V, R
Collector Cut-off Current VCE=400V, VBE (off) = -1.5V 10 µA
Collector Cut-off Current VCE=400V, VBE(off) = -1.5V @
Emitter Cut-off Current VEB=5V, IC = 0 10 µA
* DC Current Gain VCE=5V, IC = 0.1A
Turn ON Time VCC=150V, IC=3A
Storage Time 2.5 µs
Fall Time 1 µs
V
(off)=-5V, L = 180µH, Clamped
BE
(off)=-5V, L = 180µH, Clamped
V
BE
= 51Ω @
= 125°C
T
C
T
=125°C
a
=5V, IC = 1A
V
CE
=5V, IC=3A
V
CE
I
=-IB2=0.6A
B1
=50Ω
R
L
BE
450 V
400 V
1mA
1mA
20
20
80
10
1 µs
h
Classification
FE
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
20 ~ 40 30 ~ 60 40 ~ 80
Package Demensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
KSC2335F
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
0.35
2.54TYP
±0.20
[2.54
±0.10
±0.10
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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