Fairchild Semiconductor KSC2335 Datasheet
KSC2335
High Speed, High Voltage Switching
• Industrial Use
KSC2335
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1.Base 2.Collector 3.Emitter
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current (DC) 7 A
*Collector Current (Pulse) 15 A
Base Current (DC) 3.5 A
Collector Dissipation (Ta=25°C) 1.5 W
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
(sus) Collector-Emitter Sustaining Voltage IC = 3A, IB1 = 0.6A, L = 1mH 400 V
V
CEO
(sus)1 Collector-Emitter Sustaining Voltage IC = 3A, IB1 = -IB2 = 0.6A
V
CEX
V
(sus)2 Collector-Emitter Sustaining Voltage IC = 6A,IB1= 2A, IB2 = -0.6A
CEX
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
1
FE
h
FE2
h
FE3
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.2 V
V
BE
t
ON
t
STG
t
F
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Turn ON Time V
Storage Time 2.5 µs
Fall Time 1 µs
(off) = -5V, L = 180µH, Clamped
V
BE
V
(off) = -5V, L = 180µH, Clamped
BE
= 400V, IE = 0 10 µA
CB
= 400V, RBE= 51Ω @ TC=125°C 1mA
CE
= 400V, VBE(off)= -1.5V 10 µA
CE
= 400V, VBE(off)= -1.5V @
CE
=125°C
T
C
= 5V, IC = 0 10 µA
EB
= 5V, IC = 0.1A
CE
= 5V, IC = 1A
V
CE
V
= 5V, IC = 3A
CE
=150V, IC= 3A
CC
= -IB2 = 0.6A
I
B1
= 50Ω
R
L
450 V
400 V
1mA
20
20
80
80
10
1 µs
h
Classification
FE
Classification R O Y
h
FE2
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
20 ~ 40 30 ~ 60 40 ~ 80
Typical Characteristics
KSC2335
5
4
3
2
1
[A], COLLECTOR CURRENT
C
I
0
012345
IB=0.50A
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB=0.45A
IB=0.40A
IB=0.35A
IB=0.30A
IB=0.25A
IB=0.20A
IB=0.15A
IB=0.10A
IB=0.05A
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
Ic[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(SAT) [V], SATURATION VOLTAGE
BE
0.01
(SAT) [V], V
0.01 0.1 1 10
CE
V
VCB[V], COLLECTOR-BASE VOLTAGE
VBE(SAT)
VCE(SAT)
IC = 5 I
Pulsed
B
160
140
120
100
80
DERATING
C
60
40
dT [%], I
Dissipation Limited
20
0
0 50 100 150 200
TC [oC], CASE TEMPERATURE
S/b Limited
VCE = 5 V
Pulsed
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
8
6
4
2
[A], COLLECTOR CURRENT
C
I
0
0 100 200 300 400 500
VCE [V], COLLECTOR-EMITTER VOL TAGE
Figure 5. Reverse Bias Safe Operating Area Figure 6. Forward Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Figure 4. Derating Curve of Safe Operating Areas
100
10
Dissipation Limoted
1
0.1
0.01
(SUS)
(SUS)
CEO
CEX
V
V
[A], COLLECTOR CURRENT
C
I
1E-3
1 10 100 1000 10000
S/b Limited
100 ms
VCE [V], COLLECTOR-EMITT E R VOL TA G E
Single Pulse
PW = 10 us
50 us
0.1 ms
0.3 ms
1 ms
10 ms
Rev. A1, June 2001
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