Fairchild Semiconductor KSC2334 Datasheet
KSC2334
High Speed Switching Industrial Use
• Complement to KSA1010
KSC2334
NPN Epitaxial Silicon Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
ICP
IB
PC
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
Collector-Base Voltage 150 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 7 V
Collector Current (DC) 7 A
*Collector Current (Pulse) 15 A
Base Current (DC) 3.5 A
Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (T
=25°C) 1.5 W
A
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Uni ts
V
(sus) Collector-Emitter Sustaining Voltage IC = 5A, IB1= 0.5A, L = 1mH 100 V
CEO
(sus)1 Collector-Emitter Sustaining Voltage IC = 5A, IB1 = -IB2 = 0.5A
VCEX
(sus)2 Collector-Emitter Sustaining Voltage IC = 10A, I
V
CEX
ICBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
h
FE3
V
(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 0.6 V
CE
(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 V
V
BE
t
ON
t
STG
t
F
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Turn On Time VCC = 50V, IC = 5A
Storage Time 0.5 µs
Fall Time 1.5 µs
V
(off) = -5V, L = 180µH, Clamped
BE
=1A, IB2 = -0.5A,
B1
(off) = -5V, L = 180µH, Clamped
V
BE
= 100, IE = 0 10 µA
CB
= 100V, R
CE
= 100V, VBE(off) = -1.5V
CE
= 100V, VBE(off) = -1.5V
V
CE
@ T
= 125°C
C
= 5V, IC = 0 10 µA
EB
= 5V, IC = 0.5A
CE
= 5V, IC = 3A
V
CE
= 5V, IC = 5A
V
CE
I
= -IB2 = 0.5A
B1
= 10Ω
R
L
= 51Ω@TC =125°C 1mA
BE
100 V
100 V
10
1
40
40
240
20
0.5 µs
µA
mA
h
Classification
FE
Classification R O Y
h
FE2
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSC2334
5
4
I
= 100mA
B
IB = 90mA
IB = 80mA
IB = 70mA
IB = 60mA
IB = 50mA
3
2
IB = 40mA
IB = 30mA
IB = 20mA
[A], COLLECTOR CURRENT
C
1
I
0
012345
IB = 10mA
VCE[V], COLLECTOR-EMITTER V O LTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC/IB = 10
1000
100
VCE = 5V
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
100ms
10ms
S/b Limited
50
µ
100
s
µ
300
s
µ
s
1ms
100
IC MAX. (Pulse)
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
Dissipation
Limited
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Safe Operating Area
Collector-Emitter Saturation Voltage
160
140
120
100
80
DERATING
c
60
Dissipation Limited
40
dT(%), I
20
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
S/b Limited
50
45
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200 225 250
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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