Fairchild Semiconductor KSC2333 Datasheet
KSC2333
High Speed Switching Application
• Low Collector Saturation Voltage
• Specified of Reverse Biased SOA With Inductive Load
KSC2333
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1.Base 2.Collector 3.Emitter
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
ICP
IB
P
C
T
J
T
STG
*PW≤350µs, Duty Cycle≤10%
Electrical Characteristics
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 4 A
Base Current (DC) 1 A
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage IC = 0.5A, IB =0.1A, L = 1mH 400 V
CEO
(sus)1 Collector-Emitter Sustaining Voltage IC = 0.5A, IB1 = -IB2 = 0.1A
VCEX
V
(sus)2 Collector-Emitter Sustaining Voltage IC = 1A, IB1 = 0.2A, -IB2 =0.2A
CEX
ICBO
I
CER
I
CEX1
I
CEX2
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current
I
EBO
h
FE1
h
FE2
V
(sat) * Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1 V
CE
(sat) * Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1.2 V
V
BE
t
ON
t
STG
t
F
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
Emitter Cut-off Current V
* DC Current Gain V
Turn ON Time V
Storage Time 2.5 µs
Fall Time 1 µs
= 125°C, L = 180µH, clamped
T
C
= 125°C, L = 180µH, clamped
T
C
= 400V, IE = 0 10 µA
CB
= 400V, R
CE
= 400V, VBE(off) = -5V 10 µA
CE
V
= 400V, VBE(off) = -5V @
CE
T
= 125°C
C
= 5V, IC = 0 10 µA
EB
= 5V, IC = 0.1A
CE
= 5V, IC = 0.5A
V
CE
= 150V, IC = 0.5A
CC
I
= - IB2 = 0.1A
B1
= 300Ω
R
L
=51Ω, TC = 125°C 1mA
BE
450 V
400 V
1mA
20
80
10
1 µs
hFE Classification
Classification R O Y
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
20 ~ 40 30 ~ 60 40 ~ 80
Typical Characteristics
KSC2333
1.0
0.8
IB = 100mA
IB = 60mA
0.6
IB = 70mA
IB = 50mA
IB = 40mA
IB = 80mA
IB = 30mA
0.4
IB = 20mA
IB = 10mA
0.2
Ic[A], COLLECTOR CURRENT
0.0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
VBE(sat)
VCE(sat)
1 10 100 1000
IC[mA], COLLECTOR CURRENT
IB = 90mA
IC/IB = 5
Pulsed
1000
VCE = 5V
Pulsed
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
10
1
s], FALL TIME
µ
0.1
[
f
t
[µs], TURN ON TIME
[µs], STORAGE TIME
on
stg
t
t
0.01
10 100 1000
IC= 5IB1 = -5I
Pulsed
t
stg
t
f
t
on
B2
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10000
Dissipation Limited
1000
100
[mA], COLLECTOR CURRENT
C
I
10
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Bias Safe Operating Area Figure 6. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
1mS
S/b Limited
10mS
100
Figure 4. Turn On, Storage and Fall Time
vs Collector Current
1.0
PW=10
µ
µ
S
S
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
(A), COLLECTOR CURRENT
C
I
0.1
0.0
0 50 100 150 200 250 300 350 400 450 500
VCE(V), COLLECTOR-EMITTER VOLTAGE
V
V
CEO
CEX
(SUS)
(SUS)
Rev. A1, June 2001
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