Fairchild Semiconductor KSC2328A Datasheet
KSC2328A
Audio Power Amplifier Applications
• Complement to KSA928A
• Collector Power Dissipation : P
• 3 Watt Output Application
C
=1W
KSC2328A
1
1. Emitter 2. Collector 3. Base
TO-92L
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 2 A
Collector Power Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(on) Base-Emitter On Voltage VCE=2V, IC=500mA 1.0 V
V
BE
(sat) Collector-E mitter Saturat ion Voltage IC=1.5A, IB=0.03A 2.0 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC=100µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=1mA, IC=0 5 V
Collector Cut-off Current VCB=30V, IE=0 100 nA
Emitter Cut-off Current VEB=5V, IC=0 100 nA
DC Current Gain VCE=2V, IC=500mA 100 320
Current Gain Bandwidth Product VCE=2V, IC=500mA 120 MHz
Collector Output Capacitance VCB=10V,IE=0, f=1MHz 3 0 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
100 ~ 200 160 ~ 320
Typical Characteristics
KSC2328A
1400
1200
1000
800
600
400
[mA], COLLECTOR CURRENT
C
I
200
0
024681012141618
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
IC = 50 I
B
Ta = 25oC
1
0.1
(sat)[V], SATURATION VOL TA GE
CE
(sat), V
BE
V
0.01
1 10 100 1000
IC[mA], COLLECTOR CURRENT
IB = 7mA
IB = 6mA
IB = 5mA
IB = 4mA
IB = 3mA
IB = 2mA
IB = 1mA
VCE = 2V
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
1400
1200
1000
800
600
400
[mA], COLLECTOR CURRENT
200
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VCE = 2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
10
IC (MAX) PULSE
IC (MAX)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.1 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
DC OPERATING
T
C
=25
o
C
1ms
1s
V
(MAX)
CEO
1.4
1.2
1.0
0.8
0.6
0.4
[W], POWER DISSIPATION
C
P
0.2
0.0
0 25 50 75 100 125 150 175
Ta[oC], AMIBIENT TEMPERATURE
Rev. A2, September 2002
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