Fairchild Semiconductor KSC2258A, KSC2258 Datasheet
KSC2258/2258A
High Voltage General Amplifier
TV Video Output Amplifier
• High BV
CEO
KSC2258/2258A
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
VCEO
VEBO
IC
ICP
PC
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 6 V
Collector Current (DC) 100 mA
Collector Current (Pulse) 150 mA
Collector Dissipation (TC=25°C) 4 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
EBO
I
CER
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 5mA 1.2 V
V
CE
(on) Base-Emitter On Voltage V
V
BE
f
T
Output Capacitance V
C
ob
Emitter-Base Breakdown Voltage IE = 0.1mA, IC = 0 6 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
: KSC2258
: KSC2258A
: KSC2258
: KSC2258A
TC=25°C unless otherwise noted
= 250V, R
CE
= 20V, IC = 40mA
CE
= 50V, IC = 5mA
V
CE
= -20V, IC = 40mA 1.2 V
CE
= 10V, IC = 10mA 100 MHz
CE
= 50V, f = 1MHz 3 4.5 pF
CB
250
300
250
300
= 100KΩ 100 µA
BE
40
30
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSC2258/2258A
100
80
60
40
20
[mA], COLLECTOR CURRENT
C
I
0
0246810
IB=2.0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
VCE(sat)
1 10 100 1000
IC[mA], COLLECTOR CURRENT
IC = 10 I
IB=1.8mA
IB=1.6mA
IB=1.4mA
IB=1.2mA
IB=1.0mA
IB=0.8mA
IB=0.6mA
IB=0.4mA
IB=0.2mA
B
1000
100
VCE = 10V
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
IC [mA], COLLECTOR CURRENT
f = 1 MHz
10
(pF), CAPACITANCE
OB
C
1
1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
1000
100
10
1
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
110100
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Power Derating
©2000 Fairchild Semiconductor International
5
VCB = 10 V
4
3
2
1
[W], POWER DISSIPATION
D
P
0
0 25 50 75 100 125 150 175 200 225 250
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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