Fairchild Semiconductor KSC2233 Datasheet
KSC2233
B/W TV Horizontal Deflection Output
• Collector-Base Voltage : V
• Collector Current (DC) : I
• Collector Dissipation : P
CBO
= 4A
C
= 40W
C
= 200V
KSC2233
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage 200 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current 4 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature -55 ~ +150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
ICBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 4A, IB = 0.4A 1 V
V
CE
(sat) Base-Emitt er Saturation Voltage IC = 4A, IB = 0.4A 1.5 V
V
BE
f
T
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 200 V
Collector-Emitter Breakdown Voltage IC = 20mA, IB =0 60 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 170V, IE = 0 10 µA
CB
= 5V, IC = 1A
CE
V
= 5V, IC = 4A
CE
= 5V, IC = 0.5A 10 MHz
CE
30
20 40
150
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSC2233
IB = 50 mA
IB = 45 mA
IB = 40 mA
IB = 35 mA
IB = 30 mA
5
4
3
IB = 25 mA
2
IB = 20 mA
IB = 15 mA
[A], COLLECTOR CURRENT
1
C
I
0
0 4 8 12 16 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 10 mA
IB = 5 mA
IC = 10 I
VCE = 5V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
B
1000
100
(pF), CAPACITANCE
OB
C
10
110100
f = 1 MHz
=0
I
E
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
Thermal limita t ion
*200ms
1
[A], COLLECTOR CURRENT
C
1. T=25oC
I
2. *Single pulse
0.1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
S/B limitation
S/B limitation
*10ms
Figure 4. Collector Output Capacitance
80
60
40
20
[W], POWER DISSIPATION
D
P
0
0 25 50 75 100 125 150
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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