Fairchild Semiconductor KSC2073 Datasheet
TV Vertical Deflection Output
• Complement to KSA940
• Collector-Base Voltage : V
CBO
= 150V
KSC2073
KSC2073
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage 150 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 5 V
Collector Current 1.5 A
Collector Dissipation (TC=25°C) 25 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 1 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC = 500µA, IE = 0 150 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 150 V
Emitter-Base Breakdown Voltage IE = - 500µA, IC = 0 5 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 120V, IE = 0 10 µA
CB
= 10V, IC = 0.5A 40 75 140
CE
= 10V, IC = 0.5A 4 MHz
CE
=10V, IE = 0
CB
f = 1MHz
50 pF
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSC2073
IB=8mA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
[A], COLLECTOR CURRENT
C
I
0.1
0.0
0 5 10 15 20 25 30 35 40 45 50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
VBE(sat)
VCE(sat)
IC=10I
[pF], CAPACITANCE
ob
C
1000
100
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VCE=10V
f=1MHz
=0
I
E
(sat),V
BE
0.01
V
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
[A], COLLECTOR CURRENT
C
I
0.1
10 100
VCE[V], COLLECTOR EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
DC
S/B limitationThermal limitation
S/B limitation
1.TC=25
2.*Single pulse
*1mS
10
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector-Emitter On Voltage
℃
40
35
30
25
20
15
10
[W], POWER DISSIPATION
D
P
5
0
0 25 50 75 100 125 150
TC[℃], CASE TEMPERATURE
Rev. A, February 2000
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