Fairchild Semiconductor KSC1815 Datasheet
KSC1815
Audio Frequency Amplifier & High
Frequency OSC
• Complement to KSA1015
• Collector-Base Voltage : V
CBO
= 50V
KSC1815
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current 150 mA
Base Current 50 mA
Collector Power Dissipation 400 mW
Junction Temperature 125 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.1 0.25 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=100mA, IB=10mA 1.0 V
V
BE
f
T
C
ob
NF Noise Figure V
Collector Cut-off Current VCB=60V, IE=0 0.1 µA
Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
DC Current Gain VCE=6V, IC=2mA
Current Gain Bandwidth Product VCE=10V, IC=1mA 80 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 2.0 3. 0 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=6V, IC=150mA
CE
=6V, IC=0.1mA
CE
=10kΩ, f=1Hz
R
S
70
25
1.0 1.0 dB
700
hFE Classification
Classification O Y GR L
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
Typical Characteristics
KSC1815
100
80
60
40
20
[mA], COLLECTOR CURRENT
C
I
0
0 4 8 12 16 20
IB = 400µA
IB = 350µA
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
IB = 50µA
VCE[V], COLLECTOR-EMITTER VO LTAG E
100
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
VCE = 6V
1000
, DC CURRENT GAIN
FE
h
10000
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
VCE=6V
IC=10I
B
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
1
ob
C
1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Output Capacit a nc e Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
(sat), V
10
BE
1 10 100 1000
V
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
f=1MHz
I
=0
E
100
[MHz],
T
f
10
1
CURRENT GAIN-BANDWIDTH PRODUCT
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
VCE=6V
Rev. A2, September 2002
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