Fairchild Semiconductor KSC1507 Datasheet
Color TV Chroma Output
• High Collector-Emitter Voltage : V
• Current Gain Bandwidth Product : f
CEO
T
KSC1507
KSC1507
=300V
=40MHz (Min.)
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage 300 V
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 7 V
Collector Current 0.2 mA
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 5mA 2.0 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 300 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 300 V
Emitter-Base Breakdown Voltage IE = - 10µA, IC = 0 7 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 200V, IE = 0 100 µA
CB
= 10V, IC = 10mA 40 240
CE
= 30V, IC = 10mA 40 80 MHz
CE
= 50V, IE = 0,
CB
f = 1MHz
4pF
hFE Classification
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSC1507
20
18
16
14
12
10
8
6
[mA], COLLECTOR CURRENT
4
C
I
2
0
0 20406080100120140160180200
IB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
VCE[V], COLLECT OR -E M IT TE R VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100 1000
VCE(sat)
IC[mA], COLLECTOR CURRENT
VBE(sat)
IC = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
110100
VCE = 10V
IC[mA], COLLECTOR CURRENT
B
10
[pF], CAPACITANCE
ob
C
1
1 10 100
IE=0
f=1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Figure 4. Collector Output Capacitance
Rev. A3, September 2002
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