Fairchild Semiconductor KSC1187 Datasheet
KSC1187
TV 1st, 2nd Picture IF Amplifier
(Forward AGC)
• High Current Gain Bandwidth Product : fT=700MHz
• High Power Gain : G
=24dB (TYP.) at f=45MHz
PE
KSC1187
1
1. Emitter 2. Base 3. Collector
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 4 V
Collector Current 30 mA
Collector Power Dissipation 250 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
BV
BV
I
CBO
h
f
T
C
G
V
CBO
CEO
EBO
FE
RE
PE
AGC
Collector-Base Breakdown Voltage IC=10µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 V
Collector Cut-off Current VCB=20V, IE=0 0.1 µA
DC Current Gain VCE=10V, IC=2mA 40 240
Current Gain Bandwidth Product VCE=10V, IC=3mA 400 700 MHz
Reverse Transfer Capacitance VCB=10V, IE=0, f=1MHz 0.6 pF
Power Gain VCE=10V, IC=3mA
AGC Voltage GR= 30dB, f=45MHz 4.4 5.2 6.0 V
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
20 24 dB
f=45MHz
hFE Classification
Classification R O Y
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSC1187
10
8
6
4
2
[mA], COLLECTOR CURRENT
C
I
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 100uA
IB = 90uA
IB = 80uA
IB = 70uA
IB = 60uA
IB = 50uA
IB = 40uA
IB = 30uA
IB = 20uA
IB = 10uA
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VBE(sat)
VCE(sat)
IC=10I
B
1
[pF], CAPACITANCE
re
C
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VCE = 10V
f=1MHz
I
=0
E
(sat), V
BE
0.01
V
0.01 0.1 1 10
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
[MHz],
T
f
100
CURRENT GAIN-BANDWIDTH PRODUCT
0.1 1 10
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
0.1
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Reverse Capacitance
VCE=10V
Rev. A1, June 2001
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