Fairchild Semiconductor KSC1173 Datasheet
KSC1173
Low Frequency Power Amplifier
Power Regulator
• Collector Current : IC=3A
• Collector Dissipation : P
• Complement to KSA473
NPN Epitaxial Silicon Transistor
=10W (TC=25°C)
C
1
TO-220
1.Base 2.Collector 3.Emitter
KSC1173
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
BV
CBO
BV
CEO
BV
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 3 A
Collector Dissipation (TC=25°C) 10 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.3 0.8 V
V
CE
(on) Base-Em itter ON Voltage V
V
BE
f
T
C
ob
Collector-Base Breakdown Voltage IC = 500µA, IE = 0 30 V
Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 30 V
Emitter-Base Breakdown Voltage IE = -1mA, IC = 0 5
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Base Width Product V
Output Capacitance V
= 20V, IE = 0 1.0 µA
CB
= 5V, IC = 0 1.0 µA
EB
= 2V, IC = 0.5A
CE
V
= 2V, IC = 2.5A
CE
= 2V, IC = 0.5A 0.75 1.0 V
CE
= 2V, IC = 0.5A 100 MHz
CE
= 10V, IE =0,
CB
70
25
35 pF
240
f = 1MHz
hFE Classification
Classification O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Typical Characteristics
KSC1173
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 7.2
IB = 40mA
IB = 30mA
IB = 20mA
IB = 15mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 10mA
IB = 8mA
IB = 5mA
IB = 3mA
IC = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1
VCE = 2V
IC[A], COLLECTOR CURRENT
B
4.5
4.0
3.5
3.0
2.5
2.0
1.5
(A), COLLECTOR CURRENT
1.0
C
I
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VCE=2V
VBE(V), BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
[pF], CAPACITANCE
ob
C
10
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Base-Emitter On Voltage
℃
*10ms
*50ms
S/B Limitation
1ms
Thermal
limitation
Rev. A, February 2000
IE=0
f=1MHz
10
IC MAX(Pul se)
IC MAX(DC)
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
Tc=25
*Single Pulse
VCE[V], COLLECTOR-EMITTER VOLTAGE
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