Fairchild Semiconductor KSC1008 Datasheet
KSC1008
Low Frequency Amplifier Medium Speed
Switching
• Complement to KSA708
• High Collector-Base Voltage : V
• Collector Current : I
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
=700mA
C
NPN Epitaxial Silicon Transistor
=80V
CBO
=800mW
C
1
1. Emitter 2. Base 3. Collector
TO-92
KSC1008
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 8 V
Collector Current 700 mA
Collector Power Dissipation 800 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0. 4 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.1 V
V
BE
f
T
C
ob
Collector-Base Breakdown Voltage IC=100µA, IE=0 80 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V
Collector Cut-off Current VCB=60V, IE=0 0.1 µA
Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
DC Current Gain VCE=2V, IC=50mA 40 400
Current Gain Bandwidth Product VCE=10V, IC=50mA 30 50 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y G
h
FE
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
Typical Characteristics
KSC1008
200
180
160
140
120
100
80
60
40
[mA], COLLECTOR CURRENT
C
I
20
0
0 5 10 15 20 25 30 35 40 45 50
IB = 1.8mA
IB = 1.6mA
IB = 1.4mA
IB = 1.2mA
IB = 1.0mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
VCE[V], COLLECTOR-EMITTER VOLT AGE
240
220
200
180
160
140
120
100
80
, DC CURRENT GAIN
60
FE
h
40
20
0
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VBE(sat)
VCE(sat)
IC=10I
B
1000
100
10
[mA], COLLECTOR CURRENT
C
I
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
0.01
V
1 10 100 1000
IC[mA], COLLECTOR CURRENT
VCE = 2V
VCE=2V
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
[pF],CAPACTIANCE
ob
C
1
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
f=1MHz
I
=0
E
Rev. A1, August 2001
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