Fairchild Semiconductor KSB907 Datasheet
Power Amplifier Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Built-in Damper Diode at E-C
• Darlington TR
• Complement to KSD1222
KSB907
KSB907
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
PC
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 40 V
Emitter-Base Voltage - 5 V
Collector Current(DC) - 3 A
Base Current - 0.3 A
Collector Dissipation (Ta=25°C) 15 W
Collector Dissipation (TC=25°C) 1 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
V
BE
tON
tSTG
tF
CEO
Collector- Emitter Breakdown Voltage IC = - 25mA, IB = 0 - 40 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 1.5 V
(sat) Base-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 2 V
Turn ON Time V
Storage Time 0.6 µs
Fall Time 0.25 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 20 µA
CB
= - 5V, IC = 0 - 2.5 µA
EB
= - 2V, IC = - 1A
CE
V
= - 2V, IC = - 3A
CE
= - 30V , IC = - 3A
CC
= - IB2 = - 6mA
I
B1
= 10Ω
R
L
2000
1000
0.3 µs
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSB907
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
(A), COLLECTOR CURRENT
C
I
-0.5
-0.0
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0
VCE(V), COLLECTOR EMITTER VOLTAGE
=-300uA
I
B
=-275uA
I
B
IB=-250uA
IB=-225uA
IB=-200uA
IB=-175uA
IB=0
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10
IC(A), COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
V
BE(SAT)
V
CE(SAT)
(V), SATURATION VOLTAGE
CE(SAT)
, V
BE(SAT)
-0.1
V
-0.1 -1 -10
IC(A), COLLECTOR CURRENT
IC=500I
B
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
(A), COLLECTOR CURRENT
C
I
-0.5
-0.0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2
VBE(V), BASE EMITTER VOLTAGE
VCE=-2V
VCE=-2V
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
IC MAX (PULSE)
IC MAX. (DC)
-1
-0.1
(A), COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE(V), COLLECTOR EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
10ms
DC
1ms
Figure 4. Base-Emitter On Voltage
20
18
16
14
12
10
8
6
4
(W), POWER DISSIPATION
D
P
2
0
0 255075100125150175
TC(℃) CASE TEMPERATURE
Rev. A, February 2000
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