Fairchild Semiconductor KSB906 Datasheet
Low Frequency Power Amplifier
• Low Collector- Emitter Saturation Voltage
• Complement to KSD1221
KSB906
KSB906
1
I-PAK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
PC
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 7 V
Collector Current - 3 A
Base Current - 0.5 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
V
BE
f
T
Cob
tON
tSTG
tF
CEO
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.3A - 1 - 1.7 V
(on) Base-Emitter ON Voltage V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1.7 µs
Fall Time 0.5 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 100 µA
CB
= - 7V, IC = 0 - 100 µA
EB
= - 5V, IC = - 0.5A
CE
V
= - 5V, IC = - 3A
CE
= - 5V, IC = - 0.1A - 1 - 1.5 V
CE
= - 5V, IC = - 0.5A 9 MHz
CE
= - 10V, f = 1MHz 150 pF
CB
= -30V , IC = - 1A
CC
= - IB2 = - 0.2A
I
B1
= 30Ω
R
L
60
20
200
0.4 µs
hFE Classification
Classification O Y
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
60 ~ 120 100 ~ 200
Typical Characteristics
KSB906
=-80mA
B
I
=-70mA
I
B
EMITTER COMMON
℃
TC=25
IB=-60mA
IB=-50mA
IB=-40mA
IB=-30mA
IB=-20mA
IB=-10mA
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC(mA), COLLECTOR CURRENT
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
(A), COLLECTOR CURRENT
C
I
-0.5
-0.0
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0
VCE(V), COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(V), SATURATION VOLTAGE
CE(SAT)
V
-0.01
-0.01 -0.1 -1 -10
IC(A), COLLECTOR CURRENT
IC=10I
B
-3.0
VCE=-5V
-2.5
-2.0
-1.5
-1.0
(A), COLLECTOR CURRENT
-0.5
C
I
-0.0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE(V), BASE-EMITTER VOLTAGE
VCE=-5V
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10
IC MAX (PULSE)
IC MAX DC
-1
(A), COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE(V). COLLECTOR EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
100ms
DC
32
10ms
1ms
28
24
20
16
12
8
(W), POWER DISSIPATION
D
P
4
0
0 255075100125150175
TC(℃), CASE TEMPERATURE
Rev. A1, June 2001
Loading...