Fairchild Semiconductor KSB834W Datasheet
Low Frequency Power Amplifier
• Complement to KSD880W
KSB834W
KSB834W
1
D2-PAK
1.Base 2.Collector 3.Emitter
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
PC
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 7 V
Collector Current - 3 A
Base Current - 0.5 A
Collector Dissipation (TC=25°C) 30 W
Collector Dissipation (Ta=25°C) 1.5 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
BVCEO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.3A - 0.5 - 1 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
t
ON
t
STG
t
F
Collector Cut-off Current V
Emitter Cut-off Current V
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
DC Current Gain
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1.7 µs
Fall Time 0.5 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 100 µA
CB
= - 7V, IC = 0 - 100 µA
EB
V
= - 5V, IC = - 0.5A
CE
V
= - 5V, IC = - 3A
CE
= - 5V, IC = - 0.5A - 0.7 - 1 V
CE
= - 5V, IC = - 0.5A 9 MHz
CE
= - 10V, IE = 0
CB
f = 1MHz
= -30V, IC = - 1A
CC
= - IB2 = - 0.2A
I
B1
R
= 30Ω
L
60
20
200
150 pF
0.4 µs
h
Classification
FE
Classification O Y
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
60 ~ 120 100 ~ 200
Package Demensions
9.90
±0.20
(0.40)
±0.20
1.40
D2-PAK
±0.20
±0.20
1.20
±0.30
9.20
15.30
±0.20
4.90
±0.10
2.00
4.50
±0.20
1.30
0.10
2.40
+0.10
–0.05
±0.15
±0.20
KSB834W
±0.30
2.54
±0.10
1.27
2.54 TYP 2.54 TYP
10.00
0.80
±0.20
±0.10
(1.75)
±0.30
15.30
(0.75)
10.00
(2XR0.45)
(8.00)
(4.40)
±0.20
0°~3°
0.50
0.80
+0.10
–0.05
±0.10
(7.20)
±0.20
4.90
±0.20
9.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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