Fairchild Semiconductor KSB834 Datasheet
Low Frequency Power Amplifier
• Complement to KSD880
KSB834
KSB834
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
PC
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 7 V
Collector Current - 3 A
Base Current - 0.5 A
Collector Dissipation (TC=25°C) 30 W
Collector Dissipation (Ta=25°C) 1.5 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ. Max. Units
I
CBO
I
EBO
BVCEO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.3A - 0.5 - 1 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
t
ON
T
STG
t
F
Collector Cut-off Current V
Emitter Cut-off Current V
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
DC Current Gain
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1.7 µs
Fall Time 0.5 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 100 µA
CB
= - 7V, IC = 0 - 100 µA
EB
V
= - 5V, IC = - 0.5A
CE
V
= - 5V, IC = - 3A
CE
= - 5V, IC = - 0.5A - 0.7 - 1 V
CE
= - 5V, IC = - 0.5A 9 MHz
CE
= - 10V, IE = 0
CB
f = 1MHz
= -30V, IC = - 1A
CC
= - IB2 = - 0.2A
I
B1
R
= 30Ω
L
60
20
200
150 pF
0.4 µs
h
Classification
FE
Classification O Y
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
60 ~ 120 100 ~ 200
Typical Characteristics
KSB834
=-80mA
B
I
=-70mA
I
B
EMITTER COMMON
℃
TC=25
IB=-60mA
IB=-50mA
IB=-40mA
IB=-10mA
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
(A), COLLECTOR CURRENT
C
I
-0.5
-0.0
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0
VCE(V), COLLECTOR-EMITTER VOLTAGE
IB=-30mA
IB=-20mA
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1
IC(A), COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
EMITTER COMMON
I
C/IB
-1
-0.1
=10
(V), SATURATION VOLTAGE
CE(SAT)
V
-0.01
-0.01 -0.1 -1
IC(A), COLLECTOR CURRENT
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
(A), COLLECTOR CURRENT
C
I
-0.5
-0.0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VBE(V) BASE-EMITTER VOLTAGE
EMITTER COMMON
V
EMITTER COMMON
V
=-5V
CE
=-5
CE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10
IC MAX. (Pulse)
IC MAX. (Continous)
-1
(A), COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE(V), COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
1ms
10ms
100ms
1s
DC
(T
C
=25
℃
)
40
35
30
25
20
15
(W), DISSIPATION
D
10
P
5
0
0 255075100125150175
TC(℃), CASE TEMPERATURE
Rev. A1, June 2001
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