Fairchild Semiconductor KSB795, KSB794 Datasheet
KSB794/795
Audio Frequency Power Amplifier
• Low Speed Switching Industrial Use
KSB794/795
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
Collector-Base Volage
Collector-Emitter Volage
Emitter-Base Voltage - 8 V
Collector Current (DC) - 1.5 A
*Collector Current (Pulse) - 3 A
Base Current (DC) - 0.15 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
TJ Junction Temperature 150 °C
T
STG
* PW≤300µs, Duty Cycle≤10%
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
V
CE
V
BE
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed.
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
(sat) * Collector-Emitter Saturation Voltage IC = - 1A, IB = - 1mA -1.5 V
(sat) * Base-Emitter Saturation Voltage IC = - 1A, IB = - 1mA - 2 V
TC=25°C unless otherwise noted
: KSB794
: KSB795
: KSB794
: KSB795
- 60
- 80
- 60
- 80
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 10 µA
CB
= - 60V, R
CE
= - 60V, VBE (off) = 1.5V - 10 µA
CE
= - 60V, VBE (off) = 1.5V
CE
@ T
= 125°C
C
= - 5V, IC = 0 - 1 mA
EB
= - 2V, IC = - 0.5A
CE
= - 2V, IC = - 1A
V
CE
V
V
V
V
R1.= 10 kΩ
.
R2
= 500Ω
= 51Ω @ TC= 125°C - 1mA
BE
-1 mA
1000
2000 30000
hFE Classificntion
Classification R O Y
h
FE2
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
2000 ~ 5000 4000 ~ 10000 8000 ~ 30000
Typical Characteristics
KSB794/795
=-500uA
B
I
=-300uA
B
I
=-200uA
B
I
=-150uA
I
B
IB=-100uA
IB=-80uA
100000
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
(A), COLLECTOR CURRENT
C
I
-0.2
-0.0
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0
=-1000uA
B
I
VCE(V), COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
VBE(SAT)
VCE(SAT)
IC=2000I
B
10
1
0.1
(A), COLLECTOR CURRENT
C
I
0.01
110100
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10
-1
[V], SATURATION VOLTAGE
BE(SAT)
. V
CE(SAT)
-0.1
V
-0.1 -1
IC[A],COLLECTOR CURRENT
3ms
Dissipation Limited
DC
Single pulse
300us
1ms
S/b Limited
VCE=-2V
Plused
PW=30us
100us
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Safe Operating Area
Collector-Emitter Saturation Voltage
160
140
120
100
80
DERATING
C
60
dT[%], I
40
20
0
0 25 50 75 100 125 150 175 200
S/b Limited
Dissipation Limited
TC[OC], CASE TEMPERATURE
14
12
10
8
6
4
[W], POWER DISSIPATION
D
P
2
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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