Fairchild Semiconductor KSB772 Datasheet
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
KSB772
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC=25°C)
Collector Dissipation (T
R
θja
R
θjc
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Junction to Ambient
Junction to Case
Junction Temperature
Storage Temperature
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.5 V
V
CE
(sat) * Base-Em itter Satur ation Voltage IC = - 2A, IB = - 0.2A - 1.0 - 2.0 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
=25°C)
a
TC=25°C unless otherwise noted
= - 30V, IE = 0 - 1 µA
CB
= - 3V, IC = 0 - 1 µA
EB
= - 2V, IC = - 20mA
CE
= - 2V, IC = - 1A
V
CE
= - 5V, IE = - 0.1A 80 MHz
CE
= - 10V, IE = 0
CB
f = 1MHz
- 40 V
- 30 V
- 5 V
- 3 A
- 7 A
- 0.6 A
10 W
1W
132 °C/W
13.5 °C/W
150 °C
- 55 ~ 150 °C
30
60
220
160 400
55 pF
hFE Classificntion
Classification R O Y G
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. B, October 2002
60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400
Typical Characteristics
KSB772
IB = -10mA
IB = -9mA
-2.0
-1.6
IB = -8mA
-1.2
-0.8
[A], COLLECTOR CURRENT
C
I
-0.4
0 -4 -8 -12 -16 -20
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10000
-1000
VBE(sat)
-100
(sat)[mV] SATURATION VOLTAGE
-10
BE
(sat),V
CE
V
-1
VCE(sat)
-1 -10 -100 -1000 -10000
IC[mA], COLLECTOR CURRENT
IB = -3mA
IB = -2mA
IB = -1mA
IC = 10·I
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000 -10000
VCE = -2V
IC[mA], COLLECTOR CURRENT
B
1000
100
10
[pF], CAPACITAN CE
ob
C
1
-1 -10 -100
IE = 0
f=1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
1
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
-0.01 -0.1 -1
f
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Figure 4. Collector Output Capacitance
VCE=5V
-10
IC MAX(Pulse)
IC MAX(DC)
-1
Dissipation
Limited
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
10ms
1ms
s/b Limited
100us
V
CEO
MAX
Rev. B, October 2002
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