Fairchild Semiconductor KSB744A, KSB744 Datasheet
KSB744/744A
Audio Frequency Power Amplifier
• Complement to KSD794/KSD794A
KSB744/744A
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
I
CP
IB
PC
P
C
Collector-Base Voltage -70 V
Collector-Emitter Voltage : KSB744
Emitter-Base Voltage -5 V
Collector Current (DC) -3 A
*Collector Current (Pulse) -5 A
Base Current -0.6 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
TJ Junction Temperature 150 °C
T
STG
* PW≤10ms, Duty Cycle≤50%
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. T yp. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) * Collector-Emitter Saturation Voltage IC = -1.5A, IC = -0.15A -0.5 -2 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = -1.5A, IB = -0.15A -0.8 -2 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
: KSB744A
TC=25°C unless otherwise noted
= -45V, IE = 0 -1 µA
CB
= -3V, IC = 0 -1 µA
EB
= -5V, IC = -20mA
CE
V
= -5V, IC = -0.5A
CE
= -5V, IC = -0.1A 45 MHz
CE
= -10V, IE = 0
CB
f = 1MHz
-45
-60
30
120
60
100 320
60 pF
V
V
hFE Cassification
Classification R O Y
h
FE2
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 120 100 ~ 200 160 ~ 320
Typical Characteristics
KSB744/744A
-1.6
IB = -20mA
-1.2
-0.8
IB = -18mA
IB = -16mA
IB = -14mA
IB = -12mA
IB = -10mA
IB = -8mA
IB = -6mA
-0.4
Ic[A], COLLECTOR CURRENT
0 -10 -20 -30 -40
IB = -4mA
IB = -2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
VBE(sat)
-0.1
(sat)[V] SATURATION VOLTAGE
BE
VCE(sat)
(sat)[V],V
CE
V
-0.01
-0.001 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
IC = 10·I
-1000
-100
-10
, DC CURRENT GAIN
FE
h
-1
-0.001 -0.01 -0.1 -1 -10
VCE = -5V
IC[A], COLLECTOR CURRENT
B
1000
100
10
IE = 0
f=1.0MHz
Cob[pF], CAPACITANCE
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
1
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
-0.01 -0.1 -1
f
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Collector Output Capacitance
DC
Dissipation
10ms
KSB744 V
KSB744A V
1ms
s/b Limited
100us
MAX
CEO
MAX
CEO
Rev. A, February 2000
VCE=5V
-10
Ic MAX(Pulse)
Ic MAX(DC)
-1
Limited
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
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