Fairchild Semiconductor KSB708, KSB707 Datasheet
KSB707/708
Low Frequency Power Amplifier
• Low Speed Switching
• Industrial Use
• Complement to KSD568/569
KSB707/708
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Collector-Base Voltage - 80 V
Collector-Emitter Voltage : B707
Emitter-Base Voltage - 7.0 V
Collector Current (DC) - 7.0 A
*Collector Current (Pulse) - 15 A
Base Current (DC) - 3.5 A
Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (Ta=25°C) 1.5 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.5 V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V
V
BE
* Pulse Test: PW≤350µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain
TC=25°C unless otherwise noted
: B708
TC=25°C unless otherwise noted
= - 60V , IE = 0 - 10 µA
CB
= - 5V, IC = 0 - 10 µA
EB
V
= - 1V, IC = - 3A
CE
= - 1V, IC = - 5A
V
CE
- 60
- 80
40
20
200
V
V
hFE Cassification
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 60 ~ 120 100 ~ 200
Typical Characteristics
KSB707/708
-1.0
-0.8
IB = -20mA
IB = -18mA
IB = -16mA
IB = -14mA
-0.6
IB = -12mA
IB = -10mA
-0.4
IB = -8mA
IB = -6mA
[A], COLLECTOR CURRENT
-0.2
C
I
0 -10 -20 -30 -40 -50
IB = -4mA
IB = -2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V] SATURATION VOLTAGE
BE
(sat)[V],V
CE
V
-0.01
-0.001 -0.01 -0.1 -1 -10
VCE(sat)
IC[A], COLLECTOR CURRENT
VBE(sat)
IC = 10·I
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.001 -0.01 -0.1 -1 -10
VCE = -1V
IC[A], COLLECTOR CURRENT
B
-10
-1
Dissipation
Limited
100ms
10ms
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
300us
1ms
s/b Limited
100us
50us
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
Collector-Emitter Saturation Voltage
dT[%], Ic DERATING
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175 200
s/b Limited
Dissipation Limited
TC[oC], CASE TEMPERATURE
50
40
30
20
10
[W], POWER DISSIPATION
C
P
0
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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