Fairchild Semiconductor KSB601 Datasheet
Low Frequency Power Amplifier
• Medium Speed Switching Industrial Use
• Complement to KSD560
KSB601
KSB601
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Collector-Base Voltage - 100 V
Collector-Emitter Voltage - 100 V
Emitter-Base Voltage - 7 V
Collector Current (DC) - 5 A
*Collector Current (Pulse) - 8 A
Base Current - 0.5 A
Collector Dissipation (Ta=25°C) 1.5 W
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
1
1.Base 2.Collector 3.Emitter
TO-220
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB601
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage IC = - 3A, IB1 = - 3mA,
CEO
V
(sus)1 Collector-Emitter Sustaining Voltage IC = - 3A, IB1 = - IB2 = - 3mA
CEX
L = 1mH
V
(off) = 5V, L =180µH
BE
-
100
-
100
Clamped
(sus)2 Collector-Emitter Sustaining Voltage IC = - 6A, IB1 = - 12mA
V
CEX
= 3mA, VBE(off) = 5V
I
B2
-
100
L = 180uH, Clamped
I
CBO
I
CER
Collector Cut-off Current V
Collector Cut-off Current
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 3mA - 1.5 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 3A, IB = - 3mA - 2 V
V
BE
t
ON
t
S
t
F
* Pulse Test: PW≤350µs, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain V
Turn ON Time V
Storage 1 µs
Fall time 1 µs
= - 100V, IE = 0 - 10 µA
CB
V
= - 100V, R
CE
T
= 125°C
C
= - 100V, VBE(off) = 1.5V - 10 µA
CE
= - 100V, VBE(off) = 1.5V
CE
= 125°C
T
C
= - 5V, IC = 0 - 3 mA
EB
= - 2V, IC = - 3A
CE
V
= - 2V, IC = - 5A
CE
= - 50V , IC = - 3A
CC
= - IB2 = - 3mA
I
B1
= 17Ω
R
L
BE
= 51Ω
2000
500
0.5 µs
- 1 mA
- 1 mA
15000
V
V
V
hFE Classification
Classification R O Y
h
FE1
2000 ~ 5000 3000 ~ 7000 5000 ~ 15000
©2000 Fairchild Semiconductor International Rev. A, February 2000
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